Active Member
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Address: 苏州吴中区苏蠡路
Contact name:Tina
Homray Material Technology |
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SiC substrate wafer manufacturer 4H-SI silicon carbide substrate factory
HMT company supply high quality semi-insulating type SiC wafer with 4 inch and 6 inch. The production grade MPD is less than 0.5cm-2.
Silicon carbide SiC has high energy conversion efficiency, and will not decrease with the increase of frequency, silicon carbide SiC device operating frequency can reach 10 times of silicon based devices, the same specification of silicon carbide MOSFET total energy loss is only 30% of silicon based IGBT. Silicon carbide materials will gradually replace silicon in the fields of high temperature, high frequency and high frequency, and play an important role in 5G communications, aerospace, new energy vehicles and smart power grids.
