Active Member
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[China]
Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China
Contact name:
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. |
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4H N Type SiC Semiconductor Wafer, Production Grade,3”Size
PAM-XIAMEN provides high quality single crystal SiC (Silicon
Carbide)waferfor electronic and optoelectronic industry. SiC wafer
is a next generation semiconductor materialwith unique electrical
properties and excellent thermal properties for high temperature
and high power device application. SiC wafer can be supplied in
diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped ,
and semi-insulating type available. Please contact us for more
information
SILICON CARBIDE MATERIAL PROPERTIES
| Polytype | Single Crystal 4H | Single Crystal 6H |
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| c=10.053 Å | c=15.117 Å | |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| ne = 2.777 | ne = 2.755 | |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
4H N Type SiC Semiconductor Wafer, Production Grade,3”Size
| SUBSTRATE PROPERTY | S4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430 |
| Description | Production Grade 4H SEMI Substrate |
| Polytype | 4H |
| Diameter | (50.8 ± 0.38) mm |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
| Resistivity (RT) | >1E5 Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM | <30 arcsec <50 arcsec |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
| Surface Orientation | |
| On axis <0001>± 0.5° | |
| Off axis 3.5° toward <11-20>± 0.5° | |
| Primary flat orientation | Parallel {1-100} ± 5° |
| Primary flat length | 16.00 ± 1.70 mm |
| Secondary flat orientation Si-face:90° cw. from orientation flat ± 5° | |
| C-face:90° ccw. from orientation flat ± 5° | |
| Secondary flat length | 8.00 ± 1.70 mm |
| Surface Finish | Single or double face polished |
| Packaging | Single wafer box or multi wafer box |
| Usable area | ≥ 90 % |
| Edge exclusion | 1 mm |
SiC crystal application
Many researchers know the general SiCapplication:III-V Nitride Deposition;OptoelectronicDevices;High Power Devices;High Temperature Devices;High Frequency Power Devices.But few people knows detail applications, We list some detail application and make some explanations.
Because of SiC physical and electronic properties,silicon carbide
based device are well suitable for short wavelength optoelectronic,
high temperature, radiation resistant, and
high-power/high-frequency electronic devices,compared with Si and
GaAs based device.
Many researchers know the general SiC application:III-V Nitride
Deposition;Optoelectronic Devices;High Power Devices;High
Temperature Devices;High Frequency Power Devices.But few people
knows detail applications, here we list some detail application and
make some explanations:
1. SiC substrate for X-ray monochromators:such as,using SiC's large
d-spacing of about 15 A;
2. SiC substrate for high voltage devices;
3. SiC substrate for diamond film growth by microwave
plasma-enhanced chemical vapor deposition;
4. For silicon carbide p-n diode;
5. SiC substrate for optical window: such as for very short (<
100 fs) and intense (> 100 GW/cm2) laser pulses with a
wavelength of 1300 nm. It should have a low absorption coefficient
and a low two photon absorption coefficient for 1300 nm.
6. SiC substrate for heat spreader: For example,the Silicon carbide
crystal will be capillary bonded on a flat gain chip surface of
VECSEL (Laser) to remove the generated pump heat. Therefore, the
following properties are important:
1) Semi-insulating type required to prevent free carrier absorption
of the laser light;
2) Double side polished are preferred;
3) Surface roughness: < 2nm, so that the surface is enough flat
for bonding;
7. SiC substrate for THz system application: Normally it require
THz transparency
8. SiC substrate for epitaxial graphene on SiC:Graphene epitaxy on
off axis substrate and on axis are both available, surface side on
C-face or Si face are both available.
9. SiC substrate for process development loke ginding, dicing and
etc
10. SiC substrate for fast photo-electric switch
11. SiC substrate for heat sink: thermal conductivity and thermal
expansion are concerned.
12. SiC substrate for laser: optical, surface and stranparence are
concerned.
13. SiC substrate for III-V epitaxy, normally off axis substrate
are required.
Xiamen Powerway Advanced Material Co.,Limited is an expert in SiC
substrate, he can give researchers suggestions in different
application.
Applications and Benefits of SiC Electronics
Two of the most beneficial advantages that SiC-based electronics
offer are in the areas of high-temperature
and high-power device operation. The specific SiC device physics
that enables high-temperature and
high-power capabilities will be examined first, followed by several
examples of revolutionary system-level
performance improvements these enhanced capabilities enable.
