Active Member
|
[China]
Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China
Contact name:
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. |
|
|
Off-Axis 4H N Type SiC Semiconductor Wafer, Research Grade,3”Size
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.
Here shows detail specification:
SILICON CARBIDE MATERIAL PROPERTIES
| Polytype | Single Crystal 4H | Single Crystal 6H |
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| c=10.053 Å | c=15.117 Å | |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| ne = 2.777 | ne = 2.755 | |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
4H N Type SiC Semiconductor Wafer, Research Grade,3”Size
| SUBSTRATE PROPERTY | S4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430 |
| Description | Research Grade 4H SEMI Substrate |
| Polytype | 4H |
| Diameter | (50.8 ± 0.38) mm |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
| Resistivity (RT) | >1E5 Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM | <50 arcsec |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
| Surface Orientation | |
| On axis <0001>± 0.5° | |
| Off axis 3.5° toward <11-20>± 0.5° | |
| Primary flat orientation | Parallel {1-100} ± 5° |
| Primary flat length | 16.00 ± 1.70 mm |
| Secondary flat orientation Si-face:90° cw. from orientation flat ± 5° | |
| C-face:90° ccw. from orientation flat ± 5° | |
| Secondary flat length | 8.00 ± 1.70 mm |
| Surface Finish | Single or double face polished |
| Packaging | Single wafer box or multi wafer box |
| Usable area | ≥ 90 % |
| Edge exclusion | 1 mm |
sic crystal defects
Most of the defects which were observed in SiC were also observed in other crystalline materials. Like the dislocations,
stacking faults (SFs), low angle boundaries (LABs) and twins. Some others appear in materials having the Zing- Blend or
the Wurtzite structure, like the IDBs. Micropipes and inclusions
from other phases mainly appear in SiC.
High-Temperature Device Operation
The wide bandgap energy and low intrinsic carrier concentration of
SiC allow SiC to maintain
semiconductor behavior at much higher temperatures than silicon,
which in turn permits SiC semiconductor
device functionality at much higher temperatures than silicon . As
discussed in basic
semiconductor electronic device physics textbooks, semiconductor
electronic devices function
in the temperature range where intrinsic carriers are negligible so
that conductivity is controlled by
intentionally introduced dopant impurities. Furthermore, the
intrinsic carrier concentration
is a fundamental prefactor to well-known equations governing
undesired junction reverse-bias leakage
currents. As temperature increases, intrinsic carriers increase
exponentially so that undesired leakage
currents grow unacceptably large, and eventually at still higher
temperatures, the semiconductor
device operation is overcome by uncontrolled conductivity as
intrinsic carriers exceed intentional
device dopings. Depending upon specific device design, the
intrinsic carrier concentration of silicon
generally confines silicon device operation to junction
temperatures <300°C. SiC’s much smaller
intrinsic carrier concentration theoretically permits device
operation at junction temperatures exceeding
800°C. 600°C SiC device operation has been experimentally
demonstrated on a variety of
SiC devices.
The ability to place uncooled high-temperature semiconductor
electronics directly into hot
environments would enable important benefits to automotive,
aerospace, and deep-well drilling
industries. In the case of automotive and aerospace engines,
improved electronic telemetry and
control from high-temperature engine regions are necessary to more
precisely control the combustion
process to improve fuel efficiency while reducing polluting
emissions. High-temperature capability
eliminates performance, reliability, and weight penalties
associated with liquid cooling, fans, thermal
shielding, and longer wire runs needed to realize similar
functionality in engines using conventional
silicon semiconductor electronics.
