Active Member
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[China]
Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China
Contact name:
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. |
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Undoped Gallium Antimonide Wafer, 3”, As-Cut Wafer, Mechanical Wafer, Or Polished Wafer
PAM-XIAMEN provides single crystal GaSb(Gallium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. GaSb(Gallium Antimonide) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness. PAM-XIAMEN can provide epi ready grade GaSb wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.
3" GaSb Wafer Specification
| Item | Specifications |
| Conduction Type | P-type |
| Dopant | Undoped |
| Wafer Diameter | 3" |
| Wafer Orientation | (100)±0.5° |
| Wafer Thickness | 600±25um |
| Primary Flat Length | 22±2mm |
| Secondary Flat Length | 11±1mm |
| Carrier Concentration | (1-2)x1017cm-3 |
| Mobility | 600-700cm2/V.s |
| EPD | <2x103cm-2 |
| TTV | <12um |
| BOW | <12um |
| WARP | <15um |
| Laser marking | upon request |
| Suface finish | P/E, P/P |
| Epi ready | yes |
| Package | Single wafer container or cassette |
Optical properties of GaSb Wafer
| Index of refraction | 3.8 |
| Radiative recombination coefficient | ~ 10-10 cm3s-1 |
Infrared refractive index
n = k1/2≈3.71·(1+8.25·10-5T)
Long-wave TO phonon energy hνTO = 27.78 meV (300 K).
Long-wave LO phonon energy hνLO = 28.89 meV (300 K).
 | Refractive index n versus photon energy, 300 K |
 | Reflectivity versus photon energy, 300 K |
 | Intrinsic absorption coefficient near the intrinsic absorption edge
in pure p-type samples. T(K): 1. 300, 2. 77, 3. 4.2 |
 | Intrinsic absorption edge in p-type GaSb. Na = 3·1019 cm-3; T(K): 1. 215; 2. 140; 3. 77 |
 | Intrinsic absorption edge at 77 K for different doping levels,
p-GaSb. Na(cm-3): 1. 2.9·1017; 2. 5·1018; 3. 1.8·1019; 4. 3·1019 |
A ground state Rydberg energy RX1 = 2.8 meV.
 | The absorption coefficient versus photon energy, T=300 K |
 | The impurity absorption at low photon energies, T=80 K Undoped sample (p = 2.4·1017 cm-3 at 300 K) Te added (p = 7.5·1016 cm-3) Se added (p = 4.1·1016 cm-3) |
Are You Looking for an GaSb Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including GaSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!
