Results forfe doped wafer 10x10mm2from 283 Products.
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4 Inch Silicon Wafer CZ P Type Boron Doped Orientation 111 Prime Grade 4" Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semicon ...
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8 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 100 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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12 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 111 Prime Grade 12" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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4 Inch Silicon Wafer CZ P Type Boron Doped Orientation 100 Prime Grade 4" Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semicon ...
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4 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 111 Prime Grade 4" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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3 Inch Silicon Wafer CZ P Type Boron Doped Orientation 111 Prime Grade 3" Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semicon ...
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3 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 111 Prime Grade 3" Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of ...
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3 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 100 Prime Grade 3" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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2 Inch Silicon Wafer CZ P Type Boron Doped Orientation 100 Prime Grade 2" Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semicon ...
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2 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 111 Prime Grade 2" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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3 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 111 Prime Grade 3" Double Side Etched Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading ...
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6 Inch Silicon Wafer CZ N Type Antimony Doped Orientation 100 Ultra Thickness 290±20um Prime 6" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the ...
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8 Inch Silicon Wafer CZ P Type Phosphorus Doped Orientation 100 Prime Grade 8" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon ...
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6 Inch Silicon Wafer CZ P Type Boron Doped Orientation 111 Prime Grade 6" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
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6 Inch Silicon Wafer CZ P Type Boron Doped Orientation 100 Prime Grade 6" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to ...
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4H N Type SiC Crystal Wafer With Low Micropipe Density,2”Size PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide) wafer for electronic and optoelectronic industry...
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4H N Type SiC Crystal,4”Size -SiC Wafer Manufacturer PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide) wafer for electronic and optoelectronic industry. SiC ...
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4H N Type SiC Wafer Material , Dummy Grade , 10mm x 10m PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide) wafer for electronic and optoelectronic industry. SiC ...
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Silicon Wafer Cz, Mcz, Float-Zone With High-Resistivity And Good Lifetime Product Description Single crystal (Ge)Germanium Wafer PAM-XIAMENoffers semiconductor materials,Ge...
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3" Silicon Epitaxial Wafer Substrate Thickness 381±25µm / Resistivity <0.018Ωcm Epi Layer Thickness 20-25μm Silicon epitaxial wafer is a layer of single crystal silicon deposited ...
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