Results forfe doped wafer 10x10mm2from 283 Products.
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ZnO Wafer, CdS wafer, CdSe wafer, CdTe wafer, ZnS wafer, ZnSe wafer and ZnTe wafer We provides binary ( CdS , CdSe , ZnS , ZnSe , ZnTe ) and ternary ( CdZnTe ) II-VI group single ...
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2inch 4inch 6inch N Type P type doped Germanium Single Crystals Wafers, Germanium Single Crystals optical plates Ge wafer / Ge window Germanium (Ge) is the preferred lens and ...
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5*10.5mm2 A Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10.5mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices ...
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high temperature pressure temperature abrasion resistance sapphie step optical lens hardness 9.0 sapphire bearing for rolling bearing components/Round/sector sapphire glass/ ...
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Ra Roughness 1nm Customized Lithium Niobate Wafer in 4'' 6'' 8'' doped Optical grade or SAW grade Lithium niobate is transparent between 0.25 and 5.3 μm. It can be used in visible, ...
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ZnO Wafer, CdS wafer, CdSe wafer, CdTe wafer, ZnS wafer, ZnSe wafer and ZnTe wafer We provides binary ( CdS , CdSe , ZnS , ZnSe , ZnTe ) and ternary ( CdZnTe ) II-VI group single ...
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VFG metod N-type 3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers Semi-insulating type for Microelectronics, ---------------------------------------------------------------...
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5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device...
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Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single un-doped 4" 6" 6inch 4h-semi sic wafer 4Inch ...
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ZnO Wafer, CdS wafer, CdSe wafer, CdTe wafer, ZnS wafer, ZnSe wafer and ZnTe wafer We provides binary ( CdS , CdSe , ZnS , ZnSe , ZnTe ) and ternary ( CdZnTe ) II-VI group single ...
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2inch 4inch 6inch N Type P type doped Germanium Single Crystals Wafers, Germanium Single Crystals optical plates Ge wafer / Ge window Germanium (Ge) is the preferred lens and ...
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5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high...
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4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single crystal wafer2inch 3inch 4inch InP substrates for LD application, ...
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5*10.5mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Gallium Nitride (GaN) substrate is a ...
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4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single crystal wafer2inch 3inch 4inch InP substrates for LD application, ...
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Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm ...
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2inch 3inch 4inch InP substrates for LD application, semiconductor wafer,InP wafer,single crystal wafer InP introduce InP single crystal The tCZ growth (modified Czochralski method...
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5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms ...
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5*10.5mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10.5mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices ...
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M Face Free-Standing GaN Substrates Front Surface Roughness < 0.2 Nm (Polished) Or < 0.3 nm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity ...
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