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Featured Products: 2 Inch U GaN Substrates SI GaN Substrates 50.8mm, Single Crystal GaN Epitaxial Wafer 2inch C Face Un Doped N Type, 2–6-inch N-type GaN on Sapphire Epitaxial Wafer for LED laser PIN Device and more.

2 Inch U GaN Substrates SI GaN Substrates 50.8mm

2-inch Free-standing U-GaN/SI-GaN Substrates 350 ± 25 μm 50.8 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device...

[Last Updated : 2024-04-26]

2 Inch U GaN Substrates SI GaN Substrates 50.8mm

Single Crystal GaN Epitaxial Wafer 2inch C Face Un Doped N Type

2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview High-quality GaN free-standing substrates with low ...

[Last Updated : 2024-04-26]

Single Crystal GaN Epitaxial Wafer 2inch C Face Un Doped N Type

2–6-inch N-type GaN on Sapphire Epitaxial Wafer for LED laser PIN Device

Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of ...

[Last Updated : 2024-04-26]

2–6-inch N-type GaN on Sapphire Epitaxial Wafer for LED laser PIN Device

SiC N Type Substrate

6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Currently silicon ...

[Last Updated : 2024-04-11]

350um 4H SiC substrate

6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•Cm—0.025Ω•Cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Silicon carbide (SiC) ...

[Last Updated : 2024-04-11]

6inch SiC Epitaxial Wafer

P-SBD Grade 6inch 4H-SiC substrate N-Type Off-Axis:4°toward <11-20>±0.5 ° 6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•cm For ...

[Last Updated : 2024-04-11]

260μm Silicon Carbide Substrate P Level For Power Devices And Microwave Devices

4H-N/SI<0001>260μm±25μm 2-Inch SiC Substrate P-Level For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices ...

[Last Updated : 2024-04-26]

260μm Silicon Carbide Substrate P Level For Power Devices And Microwave Devices

Polytype None Permitted SiC Epitaxial Wafer P-MOS P-SBD D Grade

JDCD03-001-004 Sic Epitaxial Wafer P-MOS P-SBD D Grade Polytype None Permitted JDCD03-001-004 Overview A SiC wafer is a semiconductor material that has excellent electrical and ...

[Last Updated : 2024-04-26]

Polytype None Permitted SiC Epitaxial Wafer P-MOS P-SBD D Grade

0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face CMP Overview A SiC wafer is a semiconductor material made of silicon. A silicon carbide wafer is a crystalline ...

[Last Updated : 2024-04-26]

2 Inch SiC Substrate 350μm For Demanding Power Electronics

P-Level 2-Inch SiC Substrate 4H-N/SI<0001>260μm±25μm For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices and ...

[Last Updated : 2024-04-26]

2 Inch SiC Substrate 350μm For Demanding Power Electronics

P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices

P-Level 4H-N/SI<0001>260um±25um 2-Inch SiC Substrate For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices ...

[Last Updated : 2024-04-26]

P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices

4H SiC Epitaxial Wafer ≤0.2 /cm2 0.015Ω•cm—0.025Ω•cm 150.0 mm +0mm/-0.2mm

4H SiC Epitaxial Wafer ≤0.2 /Cm2 0.015Ω•Cm—0.025Ω•Cm 150.0 mm +0mm/-0.2mm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% ...

[Last Updated : 2024-04-26]

4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm

4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•cm ≤4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher ...

[Last Updated : 2024-04-26]

4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm

47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to±1°

47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1° JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the ...

[Last Updated : 2024-04-26]

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm

JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then ...

[Last Updated : 2024-04-26]

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm

4H SiC Epitaxial Wafer SiC Wafer Substrate For Photonic Devices ISO9001

4H SiC Epitaxial Wafer ≤0.2 /Cm2 150.0 Mm +0mm/-0.2mm 47.5 Mm ± 1.5 Mm JDCD03-001-004 Overview An epitaixal wafer is a wafer of semiconducting material made by epitaxial growth ...

[Last Updated : 2024-04-26]

4H SiC Epitaxial Wafer SiC Wafer Substrate For Photonic Devices ISO9001

4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave

JDCD03-002-002 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices Overview SiC is used for the fabrication of very high...

[Last Updated : 2024-04-26]

4inch 4H-SiC Substrate P-Level SI 500.0±25.0μM MPD≤0.3/Cm2 Resistivity≥1E9Ω·Cm For Power And Microwave

JDCD03-002-001 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤0.3/cm2 Resistivity≥1E9Ω·cm for power and microwave devices Overview SiC has higher thermal conductivity than GaAs ...

[Last Updated : 2024-04-26]

4inch 4H-SiC Substrate P-Level N-Type 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•Cm

4inch 4H-SiC substrate D-level N-Type 350.0±25.0μm MPD≤5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview High Temperature Devices Because SiC has a ...

[Last Updated : 2024-04-26]

4inch 4H-SiC Substrate P-Level N-Type 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•Cm

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

JDCD03-001-004 SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face:CMP Overview It involves the growth of crystals of one material on the crystal face of another (heteroepitaxy) or ...

[Last Updated : 2024-04-26]

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

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