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Featured Products: 5*10mm2 SP-Face (11-12) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶Ω·Cm RF Device, C Face GaN Substrate, Un Doped GaN Epitaxial Wafer and more.

5*10mm2 SP-Face (11-12) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶Ω·Cm RF Device

5*10mm2 SP-face (11-12) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview The GaN semiconductor device market includes ...

[Last Updated : 2024-04-11]

5*10mm2 SP-Face (11-12) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶Ω·Cm RF Device

C Face GaN Substrate

2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview GaN has excellent material characteristics for use ...

[Last Updated : 2024-04-11]

Un Doped GaN Epitaxial Wafer

10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview Gallium Nitride (GaN) substrate is a high-quality ...

[Last Updated : 2024-04-11]

4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer

4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is the ideal material for radio ...

[Last Updated : 2024-04-26]

4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer

4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer

4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer The electrical properties of p-type Mg-doped GaN are investigated through ...

[Last Updated : 2024-04-26]

2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices Overview Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high...

[Last Updated : 2024-04-26]

2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices

625um To 675um 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire

Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the ...

[Last Updated : 2024-04-26]

625um To 675um 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire

Un Doped N Type GaN Single Crystal Substrate 5x10mm2 M Face

5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Various physical aspects and potential applicatio...

[Last Updated : 2024-04-26]

Un Doped N Type GaN Single Crystal Substrate 5x10mm2 M Face

5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate

5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Different Types of Generative ...

[Last Updated : 2024-04-26]

5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate

Gallium Nitride Semiconductor Wafer 325um 375um C Plane

2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) ...

[Last Updated : 2024-04-26]

Gallium Nitride Semiconductor Wafer 325um 375um C Plane

2 inch Free-standing SI-GaN Substrates

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices To reduce the Fe trapping carrier and the sheet resistances of the two...

[Last Updated : 2024-04-26]

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be ...

[Last Updated : 2024-04-26]

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um

5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms ...

[Last Updated : 2024-04-26]

Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The growth characteristics of Fe-doped GaN epitaxial layers on semi...

[Last Updated : 2024-04-26]

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped

(1- 100) ±0.1o, 12.5 ± 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm ...

[Last Updated : 2024-04-26]

12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped

Thickness 370um 430um 2 Inch GaN Epi Wafer Dimensions 50mm

Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm ...

[Last Updated : 2024-04-26]

Thickness 370um 430um 2 Inch GaN Epi Wafer Dimensions 50mm

5x10mm2 GaN Epitaxial Wafer Un Doped SI Type

5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate ...

[Last Updated : 2024-04-26]

5x10mm2 GaN Epitaxial Wafer Un Doped SI Type

2inch Blue-LED GaN On Silicon Wafer Longueur D’Onde Laser 455±10nm

2inch Blue-LED GaN on silicon wafer Gallium Nitride is a semiconductor technology used for high power, high-frequency semiconductor applications. Gallium Nitride exhibits several ...

[Last Updated : 2024-04-26]

2inch Blue-LED GaN On Silicon Wafer Longueur D’Onde Laser 455±10nm

2inch Green-LED GaN On Silicon Wafer Dimension 520±10nm

2inch Green-LED GaN on silicon wafer Overview Gallium nitride (GaN) is creating an innovative shift throughout the power electronics world. For decades, silicon-based MOSFETs ...

[Last Updated : 2024-04-26]

2inch Green-LED GaN On Silicon Wafer Dimension 520±10nm

5*10mm2 SP-Face (20-21)/(20-2-1) Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity < 0.05 Ω·cm

5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview A generative adversarial ...

[Last Updated : 2024-04-26]

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