Results fordata acquisition ics 12bitfrom 16921 Products.
|
|
Product Details General Description The S29GL-N family of devices are 3.0-Volt single-power Flash memory manufactured using 110 nm MirrorBit technology. The S29GL064N is a 64-Mb ...
china
|
|
|
|
|
Product Details Description The AT25DF021 is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program ...
china
|
|
|
|
|
Product Details Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device ...
china
|
|
|
|
|
Product Details Description The S29AL008D is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball FBGA, 44-pin SO, ...
china
|
|
|
|
|
Product Details Functional Description The CY7C1425KV18, CY7C1412KV18, and CY7C1414KV18 are 1.8 V synchronous pipelined SRAMs, equipped with QDR II architecture. QDR II architectur...
china
|
|
|
|
|
Product Details General Description The Spansion S34ML01G1, S34ML02G1, and S34ML04G1 series is offered in 3.3 VCC and VCCQ power supply, and with x8 or x16 I/O interface. Its NAND ...
china
|
|
|
|
|
Product Details Description The AT25DF021 is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program ...
china
|
|
|
|
|
Product Details DDR3 SDRAM 2Gb: x4, x8, x16 DDR3 SDRAM Features • VDD= VDDQ= 1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • 8n-bit ...
china
|
|
|
|
|
Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. ...
china
|
|
|
|
|
Product Details DESCRIPTION The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium ...
china
|
|
|
|
|
Product Details Description The AT25DF041A is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program ...
china
|
|
|
|
|
Product Details DESCRIPTION The CAT28LV256 is a fast, low power, low voltage CMOS Parallel E2PROM organized as 32K x 8-bits. It requires a simple interface for in-system programmin...
china
|
|
|
|
|
Product Details GENERAL DESCRIPTION The device feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus. The three bus signals are a ...
china
|
|
|
|
|
Product Details GENERAL DESCRIPTION The MX25L1605 is a CMOS 16,777,216 bit serial eLiteFlashTM Memory, which is configured as 2,097,152 x 8 internally. The MX25L1605 features a ...
china
|
|
|
|
|
Product Details General Description NM93C06 is a 256-bit CMOS non-volatile EEPROM organized as 16 x 16-bit array. This device features MICROWIRE interface which is a 4-wire serial ...
china
|
|
|
|
|
Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. ...
china
|
|
|
|
|
Product Details General Description The S29GL-N family of devices are 3.0-Volt single-power Flash memory manufactured using 110 nm MirrorBit technology. The S29GL064N is a 64-Mb ...
china
|
|
|
|
|
Product Details GENERAL DESCRIPTION MX25L1005 is a CMOS 1,048,576 bit serial Flash memory, which is configured as 131,072 x 8 internally.The MX25L1005 feature a serial peripheral ...
china
|
|
|
|
|
Product Details GENERAL DESCRIPTION The K6T4008V1C and K6T4008U1C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating ...
china
|
|
|
|
|
Product Details GENERAL DESCRIPTION The device feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus. The three bus signals are a ...
china
|
|
|
