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MT41J128M16HA-125 IT:D IC DRAM 2GBIT PARALLEL 96FBGA Micron Technology Inc.

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MT41J128M16HA-125 IT:D IC DRAM 2GBIT PARALLEL 96FBGA Micron Technology Inc.

Country/Region china
City & Province shenzhen
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Product Details

Product Details

 

DDR3 SDRAM

2Gb: x4, x8, x16 DDR3 SDRAM

 

 

Features

• VDD= VDDQ= 1.5V ±0.075V
• 1.5V center-terminated push/pull I/O
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Programmable CAS READ latency (CL)
• Posted CAS additive latency (AL)
• Programmable CAS WRITE latency (CWL) based on tCK
• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• TC of 0°C to 95°C
– 64ms, 8192 cycle refresh at 0°C to 85°C
– 32ms, 8192 cycle refresh at 85°C to 95°C
• Self refresh temperature (SRT)
• Write leveling
• Multipurpose register
• Output driver calibration

 

 

Specifications

AttributeAttribute Value
ManufacturerMicron Technology Inc.
Product CategoryMemory ICs
Series-
PackagingTray
Package-Case96-TFBGA
Operating-Temperature-40°C ~ 95°C (TC)
InterfaceParallel
Voltage-Supply1.425 V ~ 1.575 V
Supplier-Device-Package96-FBGA (9x14)
Memory Capacity2G (128M x 16)
Memory-TypeDDR3 SDRAM
Speed800MHz
Format-MemoryRAM

Descriptions

SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 800MHz 13.75ns 96-FBGA (9x14)
DRAM Chip DDR3 SDRAM 2Gbit 128Mx16 1.5V 96-Pin FBGA

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