|
[China]
Trade Verify
Address: Room 405, Building A2, Niushang Zhigu, United Industrial Park, Fengtang Avenue, Shenzhen，Guangdong, China. Post code: 518100
Contact name:Amy
SZ ADE Electronics Co., Ltd |
|
Verified Suppliers
|
|
|
Si4925BDY-T1-E3 Integrated Circuit Chip Mosfet Array 30V 5.3A 1.1W Surface Mount
Specifications of Si4925BDY-T1-E3
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| FET, MOSFET Arrays | |
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.1A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | SI4925 |
Features of Si4925BDY-T1-E3
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
Applications of Si4925BDY-T1-E3
• Load Switches
- Notebook PCs
- Desktop PCs
- Game Stations
Environmental & Export Classifications of Si4925BDY-T1-E3
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
