Results for4h n sic crystalfrom 257 Products.
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4H SiC Epitaxial Wafer ≤0.2 /Cm2 0.015Ω•Cm—0.025Ω•Cm 150.0 mm +0mm/-0.2mm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% ...
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8inch 4H-N type SiC Wafer thickness 500±25um n doped dummy prime research grade 8inch 4H-N type SiC Wafer's abstract This study presents the characterization of an 8-inch 4H-N type ...
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4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device, Application areas 1 high frequency and high power ...
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6inch 4H-SiC substrate N-Type P-MOS Grade 350.0±25.0μm MPD≤0.2/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC is used for the fabrication of very ...
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SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide Ceramic Excellent CorrosionSingle crystal single side polished silicon wafer sic wafer polishing wafer manufacturer Silicon ...
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2inch Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates Advantages of Silicon Carbide Hardness There are numerous advantages to using silicon carbide over ...
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4H SiC Epitaxial Wafer ≤0.2 /Cm2 150.0 Mm +0mm/-0.2mm 47.5 Mm ± 1.5 Mm JDCD03-001-004 Overview An epitaixal wafer is a wafer of semiconducting material made by epitaxial growth ...
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2inch 4inch 6inch 8Inch Silicon Carbide Wafer Sic Wafers Dummy Research Prime Grade A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It ...
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P-Level 4H-N/SI<0001>260um±25um 2-Inch SiC Substrate For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices ...
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6inch 4H-SiC substrate N-Type D Grade 350.0±25.0μm MPD≤5/cm2 Resistivity 0.014Ω•cm—0.028Ω•cm for power and microwave devices Overview Silicon Carbide (SiC) is a covalent network ...
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6inch 4H-SiC substrate D-level SI-Type 350.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices Overview Sized for improved production With the 150 mm wafer size, ...
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4" P Grade SiC Seed Crystal Resistivity 0.015~0.028ohm.Cm 32.5mm±2.0mm SiC Seed Crystal 4" PGrade SiC is an excellent thermal conductor. Heat will flow more readily through SiC ...
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SiC seed crystal S grade 6" S grade φ153±0.5mm SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room ...
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SiC ingot crystal 4" P grade SiC devices can operate at high frequencies (RF and microwave) because of the high saturated electron drift velocity of SiC. SiC is an excellent ...
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100.0mm±0.5mm SiC Seed Crystal 4" P Grade 0.015~0.028ohm.cm 18.0mm±2.0mm SiC Seed Crystal 4" PGrade Electronic devices formed in SiC can operate at extremely high temperatures ...
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P-MOS Grade 2-Inch SiC Substrate P-Level P-SBD Grade D Grade 150.0 mm +0mm/-0.2mm JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices and ...
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JDZJ01-001-007 Silicon Carbide Seed Crystal Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects ...
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SiC ingot crystal 6" Pgrade Silicon carbide, exceedingly hard, synthetically produced crystalline compound of silicon and carbon. Its chemical formula is SiC. Since the late 19th ...
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JDZJ01-001-008 4&6inch SiC Seed crystal The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high ...
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47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1° JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the ...
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