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4h n sic crystal

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Results for4h n sic crystalfrom 257 Products.
2inch Silicon Carbide Wafers 6H or 4H-N type or Semi-Insulating SiC Substrates 4H-N Type / Semi Insulating SiC Substrates 2inch 3inch 6inch Silicon Carbide Wafers What is a sic ...
Shanghai, china
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HPSI 4H-SEMI transparent colorless customized sic lens high purity Application of silicon carbide in power device industry Performance Unit Silicon Si Silicon Carbide SiC Gallium ...
Shanghai, china
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8inch dia200mm 4H-N Production grade dummy grade SiC wafers Production grade DUMMY grade SiC substrates, Silicon Carbide substrates for a semiconductor device, Application areas 1 ...
Shanghai, china
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3'' 4'' 350um 500um SSP DSP 4H- 6H- Research Dummy Grade SIC Epitaxial Substrates Features of SIC Wafers: Wide-band gap silicon carbide semiconductors are used to control and ...
Shanghai, china
Verified
4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device, Application areas 1 high frequency and high power ...
Shanghai, china
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2inch Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates Advantages of Silicon Carbide Hardness There are numerous advantages to using silicon carbide over ...
Shanghai, china
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2inch 4inch 6inch 8Inch Silicon Carbide Wafer Sic Wafers Dummy Research Prime Grade A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It ...
Shanghai, china
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Product Description: The SiC Substrate is available in various sizes, including 2inch, 3inch, 4inch, 6inch, and 8inch. This allows customers to choose the most suitable size for ...
Shanghai, china
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Customized Lab Grown Unnatural Blue SIC Single Crystal Raw Material for Jewelry Description: Silicon carbide has a high hardness (8.5-9.25 Mohs hardness depending on crystal type ...
Shanghai, china
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CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch epitaxy thickness 2.5-120 um for electronic power Product Descriptions SiC Epitaxy Wafers: These are single-crystal silicon carbide ...
Shanghai, china
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Synthetic Lab Created Transparent SIC Single Crystal Rough Material for Gemstones Description: Silicon carbide commonly known as carborundum, gem name drill pulp, for silicon and ...
Shanghai, china
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2inch 6H-Semi sic wafer ,customized sic substrates , 2inch 6H-N sic wafers , sic crystal ingots ,Silicon Carbide Wafer About Silicon Carbide SiC crystal Advantagement • Low lattice ...
Shanghai, china
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Aluminum Tank Liner Oxide Bonded SIC Silicon Carbide bricks / Refractory Fire Bricks Description: Silicon carbide bricks of high thermal conductivity, good wear resistance, thermal ...
Henan, china
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Description of Silicon Carbide SiC Powder From Grit F4 To F1200 Black Silicon Carbide Black SiC silicon carbide is made from quartz sand and smokeless acetylene as the mainraw ...
Henan, china
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JDZJ01-001-001 SiC Seed Crystal 4" P Grade Si-Face 90°Cw.From Primary Flat±5° SiC Seed Crystal 4" PGrade The physical and electronic properties of SiC make it the foremost ...
Shanghai, china
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Grinding Wheels for LED Substrate Application The grinding wheels for LED substrate are mainly used for back thinning of 2”, 4” and 6”LED epitaxial wafers. They can be used ...
Hainan, china
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μc MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview SiC boules (crystals) ...
Shanghai, china
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P-SBD Grade 6inch 4H-SiC substrate N-Type Off-Axis:4°toward <11-20>±0.5 ° 6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•cm For ...
Shanghai, china
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100.0mm±0.5mm SiC Seed Crystal 4" P Grade 4.0°±0.2° Politype 4H SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than ...
Shanghai, china
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6inch 4H-SiC substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC boules (crystals) are grown, ...
Shanghai, china
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