Results for3 6a mosfet power transistorfrom 23143 Products.
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ON Semiconductor NTMFS4C55NT1G MOSFET Power Transistor 4A 55V N-Channel Ultra-Low On-Resistance FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 ...
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Mosfet Power Transistor IXFH160N15T2 160A 150V 880W N-Channel TrenchT2 Description DC charging stations are designed to convert the electrical grid’s AC power into DC power that ...
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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
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IRF5210PBF P-Channel 100V 40A 200W TO-220 DIP Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ...
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IRFB4620PBF MOSFET Power Transistor High Performance Reliable Power Switching Features: • 200V Drain-Source Voltage (VDS) • 8.9A Continuous Drain Current (ID) at 25°C • 12.3A ...
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Mosfet Power Transistor TPH2R306NH1,LQ Toshiba Automotive 190A 60V 1.9 MOhms U-MOS Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers ...
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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
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2SC5589 Toshiba Mosfet Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized ...
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IRFB3806PBF MOSFET Power Transistor High Voltage High Current Switching Device Parameters: • Drain-Source Voltage (Vdss): 100V • Current - Continuous Drain (Id) @ 25°C: 66A • Rds ...
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low ...
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Darlington Bipolar Mosfet Power Transistor TIP142 for amplifier and switching applications TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are ...
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IRFR3410TRPBF MOSFET Power Transistor High-Performance Low On-Resistance for Maximum Efficiency Product Parameters: • Drain-Source Voltage: 60V • Gate-Source Voltage: ±20V • ...
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General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are ...
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IRLR2905ZTRPBF MOSFET Power Transistor High Performance Low On Resistance Fast Switching Features: • Logic Level Gate Drive, 4.5V to 20V • Low On-Resistance RDS(on) • 100% UIL ...
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General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are ...
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low ...
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
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HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
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HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
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