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3 6a mosfet power transistor

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HXY2301-2.8A Mosfet Power Transistor Description
Guangdong, china
Verified
SPW24N60C3 MOSFET Power Transistor High Power High Efficiency Low On Resistance Parameters: - Drain Source Voltage (VDS): 600V - Drain Current (ID): 24A - Gate Source Voltage (VGS)...
china
Verified
HXY2305-5A Mosfet Power Transistor Description
Guangdong, china
Verified
IRF8010PBF MOSFET Power Transistor High Speed Switching for High Power Applications Product Listing: IRF8010PBF MOSFET Features: • 100V Drain-Source Breakdown Voltage • 100V ...
china
Verified
HXY3401 Mosfet Power Transistor Description
Guangdong, china
Verified
SI2305CDS-T1-GE3 N-Channel MOSFET Power Transistor for High-Speed Switching Applications Product Features: • N-Channel MOSFET • 30V drain-source voltage • 0.005Ω maximum on-state ...
china
Verified
HXY3407 SOT23 Mosfet Power Transistor Description
Guangdong, china
Verified
FDMS86101DC MOSFET Power Transistor 8-PowerTDFN N-Channel Enhancement Mode FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - ...
china
Verified
HXY3415 Mosfet Power Transistor
Guangdong, china
Verified
ON Semiconductor NTMFS4C55NT1G MOSFET Power Transistor 4A 55V N-Channel Ultra-Low On-Resistance FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 ...
china
Verified
01P18 Mosfet Power Transistor Description
Guangdong, china
Verified
IRFB4620PBF MOSFET Power Transistor High Performance Reliable Power Switching Features: • 200V Drain-Source Voltage (VDS) • 8.9A Continuous Drain Current (ID) at 25°C • 12.3A ...
china
Verified
40P04 Mosfet Power Transistor Description
Guangdong, china
Verified
IRFB3806PBF MOSFET Power Transistor High Voltage High Current Switching Device Parameters: • Drain-Source Voltage (Vdss): 100V • Current - Continuous Drain (Id) @ 25°C: 66A • Rds ...
china
Verified
HXY4803 Mosfet Power Transistor Description
Guangdong, china
Verified
IRFR3410TRPBF MOSFET Power Transistor High-Performance Low On-Resistance for Maximum Efficiency Product Parameters: • Drain-Source Voltage: 60V • Gate-Source Voltage: ±20V • ...
china
Verified
HXY4953 Mosfet Power Transistor Description
Guangdong, china
Verified
High Voltage Switching Mosfet Power Transistor With High Thermal Resistance General Description The AOD407 uses advanced trench technology to provide excellent R DS(ON) , low gate ...
Guangdong, china
Verified
Enhancement Mode Mosfet Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the ...
Guangdong, china
Member
Enhancement Mode Mosfet Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the ...
Guangdong, china
Verified
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