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357w insulated gate bipolar transistor modules

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Product Description ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and ...
china
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Product Description ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and ...
china
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Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 12 A @ 90°C 20 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED ...
Guangdong, china
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New Insulated Gate Bipolar Transistor (IGBT) For B2B Buyers Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated ...
china
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IRG4PH50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Pros and Cons of Buying IRG4PH50UD for your Electronic Devices If you're looking to upgrade your ...
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Product:General Electric DS200IIBDG1AEA DS200IIBDG1A GE Insulated Gate Bipolar Transistor Board The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A contains nine ...
Fujian, china
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IKW40N65H5 IKW25N120T2 IHW20N120R5 IKW50N60H3 Insulated Gate Bipolar Transistor Applications •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitch...
Guangdong, china
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Product Description: High Power IGBT is a type of high power bipolar transistor, specifically a type of insulated-gate bipolar transistor (IGBT). It is an advanced semiconductor ...
Guangdong, china
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LTV-356T-D Power Isolator IC Industry-Leading Insulated Gate Bipolar Transistor (IGBT) Driver Product: LTV-356T-D Power Isolator IC Features: • Maximum working voltage: 50V • ...
china
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APT50GT60BRDQ2G IGBT Power Module Transistors IGBTs Single APT50GT60BRDQ2G Specifications Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current ...
china
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IKWH50N65WR6XKSA1 IGBT Transistors HOME APPLIANCES 14 Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs are ...
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G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides ...
Guangdong, china
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PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD ...
Guangdong, china
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GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs (max) ...
Guangdong, china
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IRGB10B60KDPBF # Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode IGBT 600V 22A 156W TO220AB Features • Low VCE (on) Non Punch Through IGBT Technology. • Low ...
china
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IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max...
china
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5pcsTO247 50JR22 TO247 N CHANNEL IGBT transistor GT50JR22 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px...
china
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ZTX951STZ Bipolar Transistors BJT PNP Big Chip SELine Product Attribute Attribute Value Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details ...
Guangdong, china
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Removable Heat Insulation Gate Valve Covers with Long Lifetime Product Introduce Heat Insulation Gate Valve Cover has three to six layers, liner is high silica glass fiber cloth, ...
Zhejiang, china
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2DI30M-050 is a BIPOLAR TRANSISTOR MODULES Rating and Specifications . Part NO: 2DI30M-050 Brand: FUJITSU Mounting Type: Screws Date Code: 04+ Quality Warranty: 3 Months     ...
china
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