Results for350um n type sic substratefrom 2709 Products.
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ESHX103001S0 is 10.25 inch bar type TFT display 1920X720 resolution, LVDS interface . brightness is 1000c/d and view angle is all A. Product parameter Part NO. ESHX103001S0 Display ...
china
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RGB RGBW High Power SMD LED CHIP 3W 4W 5W 18W 3535 5050 Ceramic SUBSTRATE For Stage Light Specification Product Type High Power SMD Led Chip Color Temperature(CCT) R=620-630nm G...
china
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2-Inch Free-Standing N-GaN Substrates N Face Surface Roughness 0.5 ~1.5 μm (Single Side Polished) 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivit...
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4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device, customized thickness 4inch 4H-N silicon carbide crystal sic ...
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2inch GaAs (100) Si-doped substrates Overview GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, ...
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2inch GaAs (100) Undoped Substrates (100)15°±0.5° Off Toward<111>A 2inch GaAs (100) Undoped Substrates Overview GaAs is a semi-conductor material with excellent performance ...
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2inch GaAs (100) Undoped Substrates GaAs-Si Wafer 0.4E18~1E18 Overview The RF devices produced with GaAs substrates are commonly used in wireless communication applications, ...
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50mm Sapphire Substrate Wafer High Purity Al2O3(＞99.995%) Thickness 430 ± 10 μm JDCD08-001-001 Diameter 50mm Sapphire substrate wafer , Thk 430um, crystal orientation C/M0.2, OF ...
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5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate ...
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5*10.5mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Generative adversarial networks (GANs) are ...
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5*10mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview GaN has many serious advantages over ...
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5*10mm2 SP-face (10-11) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Now a new material called Gallium Nitride (GaN) has the ...
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5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device Overview Since the 1990s, it has been used commonly in light ...
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5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Because GaN transistors are able to ...
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview A generative adversarial ...
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2inch GaAs(100) Zn-doped substrates Overview Gallium arsenide of a GaAs Wafer has the attribute of generating laser light from electricity in a direct manner. There are two types ...
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2inch GaAs (100) Undoped Substrates Overview Gallium arsenide of a GaAs Wafer has the attribute of generating laser light from electricity in a direct manner. There are two types ...
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2inch GaAs (100) Undoped Substrates Overview Gallium arsenide of a GaAs Wafer has the attribute of generating laser light from electricity in a direct manner. There are two types ...
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium nitride (GaN) is a very hard, mechanicall...
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2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview High-quality GaN free-standing substrates with low ...
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