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10A 100V Dual Schottky Barrier Rectifier Diode MBR10200CT Mbr10200ct Schottky Diode

Changzhou Trustec Company Limited
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Address: No. 38 Hongye Road, New Northern District, Changzhou City, 213033, Jiangsu Province, China

Contact name:Selena Chai

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Changzhou Trustec Company Limited

10A 100V Dual Schottky Barrier Rectifier Diode MBR10200CT Mbr10200ct Schottky Diode

Country/Region china
City & Province changzhou jiangsu
Categories Generator Parts & Accessories
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Product Details

Low Leakage High Efficiency Dual Schottky Barrier Rectifier Diode 10 Ampere MBR10100CT MBR10200CT
 
MBR1020CT THRU MBR10200CT
SCHOTTKY BARRIER RECTIFIERS
Reverse Voltage - 20 to 200 Volts Forward Current - 10 Ampere
 
Dual Schottky Barrier Rectifier Diode MBR1060 MBR1060CT MBR1660CT MBR2060CT 0
 

Product Features

 

The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,0.25 ”(6.35mm) from case
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
 
Mechanical Data
 
Case: JEDEC TO-220AB molded plastic
Terminals: Leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight:0.08 ounce, 2.24 grams
 
MAXIMUM RATINGS
 
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
 
 SYMBOLS
MBR
1020
CT

MBR

1030

CT

MBR

1040

CT

MBR

1050

CT

MBR

1060

CT

MBR

1070

CT

MBR

1080

CT

MBR

1090

CT

MBR

10100

CT

MBR

10150

CT

MBR

10200

CT

UNITS
Maximum repetitive peak reverse voltageVRRM2030405060708090100150200VOLTS
Maximum RMS voltageVRMS142128354249566370105140VOLTS
Maximum DC blocking voltageVDC2030405060708090100150200VOLTS
Maximum average forward rectified current 0.375”(9.5mm) lead length(see fig.1)I(AV)10.0Amps
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)

 

IFSM

150.0

 

Amps

Maximum instantaneous forward voltage at 5.0AVF0.650.750.850.95Volts

Maximum DC reverse current TA=25℃

at rated DC blocking voltage TA=100℃

IR0.21mA
1520
Typical junction capacitance (NOTE 1)CJ550450pF
Typical thermal resistance (NOTE 2)RθJC2℃/W
Operating junction temperature rangeTJ,-65 to +150
Storage temperature rangeTSTG-65 to +150

 

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to case.
 
CHARACTERISTIC CURVES
 
Dual Schottky Barrier Rectifier Diode MBR1060 MBR1060CT MBR1660CT MBR2060CT 1
Dual Schottky Barrier Rectifier Diode MBR1060 MBR1060CT MBR1660CT MBR2060CT 2
Dual Schottky Barrier Rectifier Diode MBR1060 MBR1060CT MBR1660CT MBR2060CT 3
Dual Schottky Barrier Rectifier Diode MBR1060 MBR1060CT MBR1660CT MBR2060CT 4
Dual Schottky Barrier Rectifier Diode MBR1060 MBR1060CT MBR1660CT MBR2060CT 5
Dual Schottky Barrier Rectifier Diode MBR1060 MBR1060CT MBR1660CT MBR2060CT 6

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