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50ns Recovery Ultra Fast Switching Diode BAV19 BAV20 BAV21 ROHS Compliant

Wuxi Xuyang Electronics Co., Ltd.
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Address: No.149, Zhongxin Road, Gaocheng Town, Yixing City, Jiangsu, China

Contact name:Bixia Wu

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Wuxi Xuyang Electronics Co., Ltd.

50ns Recovery Ultra Fast Switching Diode BAV19 BAV20 BAV21 ROHS Compliant

Country/Region china
City & Province jiangsu
Categories Switching Power Supply
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Product Details

BAV19 BAV20 BAV21 High Speed Switching Diode Small Signal Diode

 

 

Features

 

• DO-35 Package (JEDEC)

• Through-Hole Device Type Mounting

• Hermetically Sealed Glass

• Compression Bonded Construction

• All external surfaces are corrosion resistant and leads are readily solderable

• ROHS Compliant

• Solder hot dip Tin(Sn) lead finish

• Cathode indicated by polarity band

• Band Indicates Cathode

 

 

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

ParameterSymbolLimitUnit

Continuous Reverse Voltage BAV19

BAV20

BAV21

VR

100

150

200

V

Repetitive Peak Reverse Voltage BAV19

BAV20

BAV21

VRRM

120

200

250

V
Forward DC Current at Tamb = 25°C(1)IF250mA

Rectified Current (Average)

Half Wave Rectification with Resistive Load at Tamb = 25°C

IF(AV)200mA
Repetitive Peak Forward Current at f ≥ 50Hz, È = 180°, Tamb = 25°C(1)IFRM625mA
Surge Forward Current at t < 1s and Tj = 25°CIFSM1A
Power Dissipation at Tamb = 25°C(1)Ptot500mW
Thermal Resistance Junction to Ambient Air(1)RèJA430°C/W
Junction Temperature(1)Tj175°C
Storage Temperature Range(1)TS–65 to +175°C

 

Electrical Characteristics (TJ = 25°C unless otherwise noted)

ParameterSymbolTest ConditionMinTypMaxUnit
Forward VoltageVF

IF = 5mA

IF = 100mA

1.00

1.25

V

Leakage Current BAV19

BAV19

BAV20

BAV20

BAV21

BAV21

IR

VR = 100V

VR = 100V, Tj = 100°C

VR = 150V

VR = 150V, TJ = 100°C

VR = 200V

VR = 200V, TJ = 100°C

100

15

100

15

100

15

nA

μA

nA

μA

nA

μA

Dynamic Forward ResistancerfIF = 10mA5V
CapacitanceCtotVR = 0, f = 1MHz1.5pF
Reverse Recovery Timetrr

IF = 30mA, IR = 30mA,

Irr = 3mA, RL = 100Ω

50ns

 

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