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N Channel Mos Field Effect Transistor ,High Power Transistor -30V/-80A
N Channel Mos Field Effect Transistor Description
-30V/-80A
R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V
R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen- Free Devices Available
N Channel Mos Field Effect Transistor Applications
Switching Application
Power Management for DC/DC
Battery Protection
Ordering and Marking Information
C2
G045P03
XYMXXXXXX
Package Code
C2: PPAK5*6-8L
Date Code
XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach
materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead-free
products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free
peak reflow temperature. HUAYI defines
“Green” to mean lead-free (RoHS compliant) and halogen free (Br or
Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm
by weight).
HUAYI reserves the right to make changes, corrections,
enhancements, modifications, and improvements to this pr-
oduct and/or to this document at any time without notice.
Absolute Maximum Ratings
Typical Operating Characteristics
