WUXI LEO TECHNOLOGY CO.,LTD |
Verified Suppliers
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Solid Power-DS-SPS100P12M3M4-S04030015 V1.0
1200V 100A IGBT PIM Module
IGBT, Inverter / IGBT,逆变器
Maximum Rated Values / 最大额定值 | ||||||
Item |
Symbol |
Conditions |
Value |
Units | ||
集电极-发射极电压 Collector-emitter voltage |
VCES |
Tvj=25°C |
1200 |
V | ||
连续集电极直流电流 Continuous DC collector current |
IC |
TC=100°C |
100 |
A | ||
集电极重复峰值电流 Peak repetitive collector current |
ICRM |
tp=1ms |
200 |
A | ||
栅极-发射极峰值电压 Maximum gate-emitter voltage |
VGES |
±20 |
V | |||
总功率损耗 Total power dissipation |
Ptot |
TC=25°C, Tvj=175°C |
515 |
W | ||
Characteristic Values / 特征值 | ||||||
Item |
Symbol |
Conditions |
Min. Typ. Max. |
Units | ||
集电极-发射极饱和电压 Collector-emitter saturation voltage |
VCE(sat) |
IC=100A,VGE=15V |
Tvj=25°C Tvj=125°C Tvj=150°C |
1.92 2.34 2.44 |
2.50 |
V |
栅极阈值电压 Gate threshold voltage |
VGE(th) |
IC=3.8mA, VCE=VGE, Tvj=25°C |
5.2 5.8 6.4 |
V | ||
内部栅极电阻 Internal gate resistor |
RGint |
Tvj=25°C |
6.2 |
Ω | ||
输入电容 Input capacitance |
Cies |
f=1MHz, Tvj=25°C, VCE=25V, VGE=0V |
7.47 |
nF | ||
反向传输电容 Reverse transfer capacitance |
Cres |
f=1MHz, Tvj=25°C, VCE=25V, VGE=0V |
0.28 |
nF | ||
集电极-发射极截止电流 Collector-emitter cut-off current |
ICES |
VCE=1200V, VGE=0V, Tvj=25°C |
1.00 |
mA | ||
栅极-发射极漏电流 Gate-emitter leakage current |
IGES |
VCE=0V, VGE=20V, Tvj=25°C |
100 |
nA | ||
开通延迟时间(电感负载) Turn-on delay time, inductive load |
td( on) |
Tvj=25°C Tvj=125°C Tvj=150°C |
104 113
118 |
ns | ||
上升时间(电感负载) Rise time, inductive load |
tr |
Tvj=25°C Tvj=125°C Tvj=150°C |
27 32
34 |
ns | ||
关断延迟时间(电感负载) Turn-off delay time, inductive load |
td(off) |
IC=100A, VCE=600V VGE=-15V…+15V RGon=2Ω RGoff=2Ω
Inductive Load |
Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C |
203 251
259 |
ns | |
下降时间(电感负载) Fall time, inductive load |
tf |
181 184
197 |
ns | |||
开通损耗能量(每脉冲) Turn-on energy loss per pulse |
Eon |
Tvj=25°C Tvj=125°C Tvj=150°C |
3.04 6.17 7.22 |
mJ | ||
关断损耗能量(每脉冲) Turn-off energy loss per pulse |
Eoff |
Tvj=25°C Tvj=125°C Tvj=150°C |
6.11 8.24 8.77 |
mJ | ||
短路数据 SC data |
ISC |
VGE=-15V…+15, VCC=800V VCEmax=VCES-LsCE·di/dt, tp=10µs, Tvj=25°C |
330 |
A | ||
结-外壳热阻 Thermal resistance, junction to case |
RthJC |
Per IGBT / 每个 IGBT |
0.29 |
K/W | ||
工作温度 Temperature under switching conditions |
Tvjop |
-40 150 |
°C |
Diode, Inverter / 二极管,逆变器 Maximum Rated Values /最大额定值 | ||||||
Item |
Symbol |
Conditions |
Value |
Units | ||
反向重复峰值电压 Peak repetitive reverse voltage |
VRRM |
Tvj=25°C |
1200 |
V | ||
连续正向直流电流 Continuous DC forward current |
IF |
100 |
A | |||
正向重复峰值电流 Peak repetitive forward current |
IFRM |
tp=1ms |
200 |
A | ||
Characteristic Values / 特征值 | ||||||
Item |
Symbol |
Conditions |
Min. Typ. Max. |
Units | ||
正向电压 Forward voltage |
VF |
IF=100A |
Tvj=25°C Tvj=125°C Tvj=150°C |
2.20 2.15 2.07 |
2.80 |
V |
反向恢复峰值电流
Peak reverse recovery current |
Irm |
IF=100A -diF/dtoff=2700A/µs VR = 600 V
VGE=-15V |
Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C |
110 120
125 |
A | |
反向恢复电荷 Reverse recovery charge |
Qrr |
6.04 12.58 15.34 |
µC | |||
反向恢复损耗(每脉冲) Reverse recovery energy (per pulse) |
Erec |
2.09 4.72 5.79 |
mJ | |||
结-外壳热阻 Thermal resistance, junction to case |
RthJC |
Per diode / 每个二极管 |
0.62 |
K/W | ||
工作温度 Temperature under switching conditions |
Tvjop |
-40 150 |
°C |
IGBT, Brake Chopper / IGBT,刹车 Maximum Rated Values / 最大额定值 | ||||||
Item |
Symbol |
Conditions |
Value |
Units | ||
集电极-发射极电压 Collector-emitter voltage |
VCES |
Tvj=25°C, IC=1mA, VGE=0V |
1200 |
V | ||
连续集电极直流电流 Continuous DC collector current |
IC |
TC=100°C, Tvj=175°C |
50 |
A | ||
集电极重复峰值电流 Peak repetitive collector current |
ICRM |
tp=1ms |
100 |
A | ||
栅极-发射极峰值电压 Maximum gate-emitter voltage |
VGES |
±20 |
V | |||
总功率损耗 Total power dissipation |
Ptot |
TC=25°C, Tvj=175°C |
270 |
W | ||
Characteristic Values / 特征值 | ||||||
Item |
Symbol |
Conditions |
Min. Typ. Max. |
Units | ||
集电极-发射极饱和电压 Collector-emitter saturation voltage |
VCE(sat) |
IC=50A,VGE=15V |
Tvj=25°C Tvj=125°C Tvj=150°C |
2.10 2.53 2.61 |
2.40 |
V |
栅极阈值电压 Gate threshold voltage |
VGE(th) |
IC=1.6mA, VCE=10V, Tvj=25°C |
5.2 5.8 6.4 |
V | ||
栅极电荷 Gate charge |
QG |
VGE=-15V…+15V |
0.24 |
µC | ||
输入电容 Input capacitance |
Cies |
f=1MHz, Tvj=25°C, VCE=25V, VGE=0V |
2.96 |
nF | ||
反向传输电容 Reverse transfer capacitance |
Cres |
f=1MHz, Tvj=25°C, VCE=25V, VGE=0V |
0.11 |
nF | ||
集电极-发射极截止电流 Collector-emitter cut-off current |
ICES |
VCE=1200V, VGE=0V, Tvj=25°C |
1.00 |
mA | ||
栅极-发射极漏电流 Gate-emitter leakage current |
IGES |
VCE=0V, VGE=20V, Tvj=25°C |
100 |
nA | ||
开通延迟时间(电感负载) Turn-on delay time, inductive load |
td( on) |
Tvj=25°C Tvj=125°C Tvj=150°C |
56 60
61 |
ns | ||
上升时间(电感负载) Rise time, inductive load |
tr |
Tvj=25°C Tvj=125°C Tvj=150°C |
36 43
45 |
ns | ||
关断延迟时间(电感负载) Turn-off delay time, inductive load |
td(off) |
IC=50A, VCE=600V VGE=-15V…+15V RGon=15Ω RGoff=15Ω
Inductive Load |
Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C |
189 235
245 |
ns | |
下降时间(电感负载) Fall time, inductive load |
tf |
184 221
244 |
ns | |||
开通损耗能量(每脉冲) Turn-on energy loss per pulse |
Eon |
Tvj=25°C Tvj=125°C Tvj=150°C |
3.50 5.83 6.59 |
mJ | ||
关断损耗能量(每脉冲) Turn-off energy loss per pulse |
Eoff |
Tvj=25°C Tvj=125°C Tvj=150°C |
2.93 4.05 4.42 |
mJ | ||
短路数据 SC data |
ISC |
VGE=-15V…+15, VCC=800V VCEmax=VCES-LsCE·di/dt, tp=10µs, Tvj=25°C |
190 |
A | ||
结-外壳热阻 Thermal resistance, junction to case |
RthJC |
Per IGBT / 每个 IGBT |
0.54 |
K/W | ||
工作温度 Temperature under switching conditions |
Tvjop |
-40 150 |
°C |
Diode, Brake Chopper / 二极管,刹车 Maximum Rated Values /最大额定值 | ||||||
Item |
Symbol |
Conditions |
Value |
Units | ||
反向重复峰值电压 Peak repetitive reverse voltage |
VRRM |
Tvj=25°C |
1200 |
V | ||
连续正向直流电流 Continuous DC forward current |
IF |
30 |
A | |||
正向重复峰值电流 Peak repetitive forward current |
IFRM |
tp=1ms |
60 |
A | ||
Characteristic Values / 特征值 | ||||||
Item |
Symbol |
Conditions |
Min. Typ. Max. |
Units | ||
正向电压 Forward voltage |
VF |
IF=50A |
Tvj=25°C Tvj=125°C Tvj=150°C |
1.94 1.64 1.57 |
2.40 |
V |
反向恢复峰值电流
Peak reverse recovery current |
Irr |
IF=50A -diF/dtoff=800A/µs VR = 600 V
VGE=-15V |
Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C |
20 29
31 |
A | |
反向恢复电荷 Reverse recovery charge |
Qr |
2.04 5.23 6.18 |
µC | |||
反向恢复损耗(每脉冲) Reverse recovery energy (per pulse) |
Erec |
0.95 2.01 2.28 |
mJ | |||
结-外壳热阻 Thermal resistance, junction to case |
RthJC |
Per diode / 每个二极管 |
1.35 |
K/W | ||
工作温度 Temperature under switching conditions |
Tvjop |
-40 150 |
°C |
Diode, Rectifier / 二极管,整流 Maximum Rated Values /最大额定值 | ||||
Item |
Symbol |
Conditions |
Value |
Units |
反向重复峰值电压 Peak repetitive reverse voltage |
VRRM |
Tvj=25°C |
1800 |
V |
最大正向均方根电流(每芯片) Maximum RMS forward current per chip |
IFRMSM |
TC = 80°C |
80 |
A |
正向浪涌电流 Surge forward current |
IFSM |
tp=10ms, Tvj=25°C, sin180° |
960 |
A |
I2t-值 I²t-value |
I2t |
tp=10ms, Tvj=25°C, sin180° |
4600 |
A2s |
Characteristic Values / 特征值 | ||||
Item |
Symbol |
Conditions |
Min. Typ. Max. |
Units |
正向电压 Forward voltage |
VF |
Tvj=25°C, IF=80A |
1.10 1.20 |
V |
反向电流
Reverse current |
IR |
Tvj=25°C, VR=1800V |
10 |
μA |
工作温度 Temperature under switching conditions |
Tvjop |
-40 150 |
°C |
Module / 模块 | ||||
Item |
Symbol |
Conditions |
Value |
Units |
绝缘测试电压 Isolation test voltage |
VISOL |
RMS, f=50Hz, t=1min |
2.5 |
kV |
模块基板材料 Material of module baseplate |
Cu | |||
内部绝缘 Internal isolation |
基本绝缘 (class 1, IEC 61140) Basic insulation (class 1, IEC 61140) |
Al2O3 | ||
爬电距离 Creepage distance |
10 |
mm | ||
电气间隙 Clearance |
7.5 |
mm | ||
相对电痕指数 Comperative tracking index |
CTI |
> 200 |
Item Symbol Conditions Min. Typ. Max. Units | |||
杂散电感,模块 Stray inductance module |
LsCE |
25 |
nH |
模块引脚电阻, 端子-芯片
Module Lead Resistance ,Terminals-Chip |
RCC’+EE’ TH=25°C,每个开关/perswitch |
1.1 |
mΩ |
储存温度
Storage temperature |
Tstg |
-40 125 |
°C |
模块安装的安装扭距 Mounting torque for module mounting |
M |
3.00 6.00 |
Nm |
重量
Weight |
G |
300 |
g |