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750V 820A Automotive Power Modules Electronic Full Bridge IGBT Module OEM

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750V 820A Automotive Power Modules Electronic Full Bridge IGBT Module OEM

Country/Region	china
City & Province	wuxi jiangsu
Categories	Electronic Signs

Product Details

Solid Power-DS-SPS820F08HDM4-S04090002

750V 820A IGBT Full Bridge Module

750V 820A IGBT

Features:

□ 750V Trench+ Field Stop technology

□ Freewheeling diodes with fast and soft reverse recovery

□ V_CE(sat) with positive temperature coefficient

□ Low switching losses

□ Short circuit ruggedness

Typical Applications:

□ Motor drives

□ Hybrid electrical vehicles

□ Automotive applications

□ Commercial agriculture vehicles

Package

Item	Symbol	Conditions		Values			Unit
Isolation test voltage	VISOL	RMS, f = 0 Hz, t =1 s		4.2			kV
Material of module baseplate				Cu
Internal isolation		(class 1, IEC 61140) Basic insulation (class 1, IEC 61140)		Al₂O₃
Creepage distance	dCreep	terminal to heatsink		9.0			mm
	dCreep	terminal to terminal		9.0
Clearance	dClear	terminal to heatsink		4.5			mm
	dClear	terminal to terminal		4.5
Comparative tracking index	CTI			＞200

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Stray inductance module	LsCE				10		nH
Module lead resistance, terminals - chip	RCC’+EE’		T_C=25℃		0.75		mΩ
Storage temperature	Tstg			-40		125	℃
Mounting torque for module mounting	M4	baseplate to heatsink		1.8		2.2	Nm
	M3	PCB to frame		0.45		0.55	Nm
Weight	G				725		g

IGBT

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Collector-emitter Voltage	VCES		T_vj=25℃	750	V
Maximum gate-emitter voltage	VGES			±20	V
Transient gate-emitter voltage	VGES	t_p≤10μs,D=0.01		±30	V
Implemented collector current	ICN			820	A
Continuous DC collector current	I_C	T_F = 80°C, T_vjmax = 175°C		450	A
Pulsed collector current,tp limited by T_jmax	ICpulse			1640	A
Power dissipation	Ptot		T_F=75℃	769	W

Item	Symbol	Conditions		Values			Unit
Item	Symbol	Conditions		Min.	Typ.	Max.	Unit
Collector-emitter saturation voltage	VCE(sat)	I_C=450A, V_GE=15V	T_vj=25℃		1.20	1.40	V
			T_vj=125℃		1.24
			T_vj=150℃		1.27
		I_C=820A, V_GE=15V	T_vj=25℃		1.40	1.60
			T_vj=125℃		1.55
			T_vj=150℃		1.60
Gate threshold voltage	VGE(th)	V_CE=V_GE, I_C=9.6mA		5.1	5.8	6.5	V
Collector-emitter cut-off current	ICES	V_CE=750V, V_GE=0V	T_vj=25℃			100	µA
Collector-emitter cut-off current	ICES	V_CE=750V, V_GE=0V	T_vj=150℃			5	mA
Gate-emitter leakage current	IGES	V_CE=0V,V_GE=±20V, T_vj=25℃		-200		200	nA
Gate Charge	Q_G	V_CE=400V, I_C=450A , V_GE=-8/+15V			1.6		μC
Internal gate resistor	RGint				0.8		Ω
Input Capacitance	Cies	V_CE=25V, V_GE=0V, f =100kHz			42.4		nF
Output Capacitance	Coes				3.1
Reverse Transfer Capacitance	Cres				0.8
Turn-on delay time,inductive load	td(on)	V_CC=400V,I_C=450A R_Gon=2.5Ω, V_GE=-8/+15V	T_vj=25℃		90		ns
			T_vj=125℃		92		ns
			T_vj=150℃		96		ns
Rise Time,inductive load	t_r		T_vj=25℃		64		ns
			T_vj=125℃		68		ns
			T_vj=150℃		70		ns
Turn-off delay time,inductive load	td(off)	V_CC=400V,I_C=450A R_Goff=5.1Ω, V_GE=-8/+15V	T_vj=25℃		520		ns
			T_vj=125℃		580		ns
			T_vj=150℃		590		ns
Fall time,inductive load	t_f		T_vj=25℃		200		ns
			T_vj=125℃		310		ns
			T_vj=150℃		320		ns
Turn-on energy loss per pulse	Eon	V_CC=400V,I_C=450A R_G=2.5Ω,R_Goff=5.1Ω V_GE=-8/+15V	T_vj=25℃		15.0		mJ
			T_vj=125℃		18.0		mJ
			T_vj=150℃		20.0		mJ
Turn off Energy loss per pulse	Eoff		T_vj=25℃		33.5		mJ
			T_vj=125℃		41.0		mJ
			T_vj=150℃		43.0		mJ

Item	Symbol	Conditions		Values			Unit
Item	Symbol	Conditions		Min.	Typ.	Max.	Unit
SC data	ISC	V_GE≤15V, V_CC=400V	tp≤3µs T_vj=150℃			5400	A
IGBT thermal resistance,junction-cooling fluid	RthJF					0.13	K /W
Operating Temperature	TJop			-40		175	℃

Diode

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Repetitive reverse voltage	VRRM		T_vj=25℃	750	V
Implemented forward current	ICN			820	A
Continuous DC forward current	I_F	T_F = 80°C, T_vjmax = 175°C		450	A
Diode pulsed current,tp limited by T_Jmax	IFpulse			1640	A

Characteristic Values

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Forward voltage	V_F	I_F=450A , V_GE=0V	T_vj=25℃		1.20	1.60	V
			T_vj=125℃		1.16
			T_vj=150℃		1.14
		I_F=820A , V_GE=0V	T_vj=25℃		1.42	1.80
			T_vj=125℃		1.43
			T_vj=150℃		1.44
Reverse recovery time	trr	I_F=450A dI_F/dt=-6700A/μs (T_vj=150°C) V_R=400V, V_GE=-8V	T_vj=25℃		122		ns
			T_vj=125℃		160
			T_vj=150℃		172
Peak reverse recovery current	IRRM		T_vj=25℃		295		A
			T_vj=125℃		360
			T_vj=150℃		375
Reverse recovery charge	QRR		T_vj=25℃		28.5		µC
			T_vj=125℃		40.5
			T_vj=150℃		43.5
Reverse recovery energy loss per pulse	Erec		T_vj=25℃		6.2		mJ
			T_vj=125℃		11.7
			T_vj=150℃		13.2
Diode thermal resistance,junction-cooling fluid	RthJFD					0.25	K /W
Operating Temperature	TJop			-40		175	℃

NTC-Thermistor

Characteristic Values

Item

Symbol

Conditions

Values

Unit

Rated resistance

R25

T_C=25℃

5.00

kΩ

B-value

R25/50

3375

Output characteristic(typical) Output characteristic(typical)

I_C = f (V_CE) T_vj= 150°C

IGBT

Transfer characteristic(typical) Switching losses IGBT (typical)

I_C = f (V_GE) V_CE = 20V E = f (R_G)

V_GE = -8/+15V, I_C = 450A, V_CE = 400V

IGBT (RBSOA)

Switching losses IGBT (typical) Reverse bias safe operating area(RBSOA)

E = f (I_C) I_C =f (V_CE)

V_GE = -8/+15V, R_Gon = 2.5Ω ,R_Goff = 5.1Ω , V_CE = 400V V_GE = -8/+15V, R_goff = 5.1Ω, T_vj = 150°C

Typical capacitance as a function of collector-emitter voltage Gate charge (typical)

C = f (V_CE) V_GE = f (Q_G)

f = 100 kHz, V_GE = 0V I_C = 450A, V_CE = 400V

IGBT

IGBT transient thermal impedance Forward characteristic of Diode (typical)

Zth(j-c) = f (t) I_F = f (V_F)

Switching losses Diode(typical) Switching losses Diode(typical)

E_rec = f (R_G) E_rec = f (I_F)

I_F = 450A, V_CE = 400V R_G = 2.5Ω, V_CE = 400V

Diode transient thermal impedance NTC-Thermistor-temperature characteristic (typical)

Zth(j-c) = f (t) R = f (T)

An IGBT module in an inverter is a compact assembly containing Insulated Gate Bipolar Transistors (IGBTs) and other components. IGBTs play a crucial role in switching and converting direct current (DC) to alternating current (AC) in devices like motor drives, solar inverters, and uninterruptible power supplies. The module simplifies integration, and proper cooling is essential for efficiency and reliability.

Circuit diagram headline