Results forsot 23 mosfet power transistorfrom 208 Products.
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INFINEON Chip IRLML6401TRPBF MOSFET P-CH 12V 4.3A SOT23 Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23...
china
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Product Name: NTK3139PT5G MOSFET Power Electronics Product Parameters: 1. Drain-Source Voltage: 30V 2. Drain Current: 1.5A 3. RDS(on): 0.2 Ohm 4. Transistor Type: N-Channel 5. ...
china
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FDS6673BZ N-Channel MOSFET Power Electronics Product Features: • Logic level gate drive • Low gate charge • Low on-state resistance • Fast switching • Avalanche rated Specification...
china
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Original New Transistor Mosfet DiodesSOT-23(SOT-23-3) LSI1012LT1G Products Description: 1. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change ...
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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
china
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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
china
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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
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Electronic Component AP2308GEN SOT-23 Advantage Price For Original Stock Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible ...
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Electronic Component AP2308GEN SOT-23 Advantage Price For Original Stock Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible ...
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NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Features ►Epitaxial Planar Die Construction ►Complementary PNP Types Available (DDTA) ►Built-In Biasing Resistors, R1 = ...
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NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Features ►Epitaxial Planar Die Construction ►Complementary PNP Types Available (DDTA) ►Built-In Biasing Resistors, R1 = ...
china
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Wholesale electronic components Support BOM Quotation AP2344GN-H Description AP2344 series are from Advanced Power innovated design and silicon process technology to achieve the ...
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Wholesale electronic components Support BOM Quotation AP2344GN-H Description AP2344 series are from Advanced Power innovated design and silicon process technology to achieve the ...
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SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 mΩ@ 4.5V 5.0 A < VGS = z RDS(on) < mΩ@VGS = 2.5V 40 z z 20 40 z RDS(on) < 53 mΩ@VGS = 1.8V ...
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SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 mΩ@ 4.5V 5.0 A < VGS = z RDS(on) < mΩ@VGS = 2.5V 40 z z 20 40 z RDS(on) < 53 mΩ@VGS = 1.8V ...
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SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8050 • Collector Current: IC=1.5A • Collector Power Dissipation: PC=2W (TC=25°C) ...
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SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8050 • Collector Current: IC=1.5A • Collector Power Dissipation: PC=2W (TC=25°C) ...
china
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Here is the English information on the MC78LC30NTRG chip: The MC78LC30NTRG is an N-channel power MOSFET from ON Semiconductor. Key Specifications: Breakdown Voltage: 30V On...
china
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Here is a potential introduction for the ON Semiconductor NCS213RSQT2G N-Channel MOSFET: NCS213RSQT2G The NCS213RSQT2G is a compact N-channel MOSFET from ON Semiconductor providing ...
china
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