Results forsot 23 mosfet power transistorfrom 55770 Products.
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LM3405AXMK Mosfet Power Transistor LED Lighting Drivers 1.6MHz 1A Constant Crnt Buck LED Dvr 1 Features VIN Operating Range of 3 V to 22 V Drives up to 5 High-Brightness LEDs in ...
china
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MP2122GJ-Z Buck Switching Regulator IC Positive Adjustable 0.608V 2 Output 2A SOT-23-8 Thin, TSOT-23-8 Features: Dual 2A-Output Current >93% Peak Efficiency >80% Light-Load ...
china
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S9013 SOT-23 NPN Transistor Complementary to S9012 S9013 SOT-23 Datasheet.pdf FEATURES Complimentary to S9012 Excellent hFE linearity MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless ...
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8205S TSSOP-8 Plastic-Encapsulate MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power ...
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8205S TSSOP-8 Plastic-Encapsulate MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power ...
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6G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may ...
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WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and ...
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6G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may ...
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WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and ...
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WST2078 N&P-Channel MOSFET Description The WST2078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate ...
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WST2078 N&P-Channel MOSFET Description The WST2078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate ...
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20G04S 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs ...
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HXY4606 30V Complementary MOSFET Description The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The complementary MOSFETs may be ...
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QM4803D N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and ...
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20G04S 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs ...
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HXY4606 30V Complementary MOSFET Description The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The complementary MOSFETs may be ...
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QM4803D N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and ...
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20G04GD 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04GD uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable ...
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AOD424G 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low R DS(ON) • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, ...
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AOD442G 60V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application Industrial ...
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