Advanced module technology delivers superior module efficiency
·Gallium-doped Wafer·Non destructive cutting ·MBB half-cut
Excellent power generation performance
·Excellent IAM and Weak light response ·Low temperature rating s
·0.40% linear Power decline
High module quality ensures long-term reliability
·Strict selected material ·Advanced technology ·Leading standard
Ultra-hydrophilic self-cleaning coating techniques
Values at Standard Test Conditions STC(AM1.5, Irradiance 1000W/m²,
Cell Temperature25°C)
| Electrical characteristics STC | RS7-610N-E2 | RS7-615N-E2 | RS7-620N-E2 | RS7-625N-E2 | RS7-630N-E2 |
| Maximum Power(Pmax) | 610W | 615W | 620W | 625W | 630W |
| Power Tolerance | 0~+5W | 0~+5W | 0~+5W | 0~+5W | 0~+5W |
| Module Efficiency | 21.82% | 22.00% | 22.18% | 22.36% | 22.54% |
| Maximum Power Current(Imp) | 12.89A | 12.95A | 13.01A | 13.06A | 13.11A |
| Maximum Power Voltage(Vmp) | 47.31V | 47.48V | 47.66V | 47.85V | 48.05V |
| Short Circuit Current(Isc) | 13.50A | 13.55A | 13.60A | 13.65A | 13.70A |
| Open Circuit Voltage(Voc) | 54.98V | 55.22V | 554.46V | 55.70V | 55.94V |
NOCT , lrradiance of 800W/m, AM1.5, Ambient Temperature 20 °C, wind
Speed 1m/s.
| Electrical characteristics NOCT | RS7-610N-E2 | RS7-615N-E2 | RS7-620N-E2 | RS7-625N-E2 | RS7-630N-E2 |
| Maximum Power(Pmax) | 458.2W | 462.0W | 465.7W | 469.5W | 473.3W |
| Maximum Power Current(Imp) | 10.41A | 10.46A | 10.51A | 10.55A | 10.59A |
| Maximum Power Voltage(Vmp) | 44.00V | 44.16V | 44.32V | 44.50V | 44.69V |
| Short Circuit Current(Isc) | 11.46A | 11.50A | 11.54A | 11.59A | 11.63A |
| Open Circuit Voltage(Voc) | 51.68V | 51.91V | 52.13V | 52.36V | 52.58V |
