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STGD5H60DF Trans IGBT Integrated Circuit Chips N-CH 600V 10A 83000mW 3 Pin DPAK T/R

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Shenzhen Weitaixu Capacitor Co.,Ltd

STGD5H60DF Trans IGBT Integrated Circuit Chips N-CH 600V 10A 83000mW 3 Pin DPAK T/R

Country/Region china
City & Province shenzhen guangdong
Categories Inverters & Converters
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Product Details

STGD5H60DF Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R

 

 

 

 

 

Basic Information :

 

Part No: STGD5H60DF

Description: Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R       

 

Collector Current (DC) : 10(A)
Collector-Emitter Voltage: 600(V)
Package Type: DPAK
Mounting: Surface Mount
Operating Temperature Classification: Military
Packaging: Tape and Reel
Rad Hardened: No
Pin Count: 2 +Tab
Configuration: Single
Channel Type: N
Operating Temperature (Max): 175C
Gate to Emitter Voltage (Max): ±20(V)
Operating Temperature (Min): -55C

 

Lead ShapeGull-wing
Package Length6.6(Max)
Package Width6.2(Max)
TabTab
PCB changed2
Package Height2.4(Max)
MountingSurface Mount
TechnologyField Stop|Trench
Channel TypeN
ConfigurationSingle
Maximum Gate Emitter Voltage (V)±20
Maximum Collector-Emitter Voltage (V)600
Typical Collector Emitter Saturation Voltage (V)1.5
Maximum Continuous Collector Current (A)10
Maximum Gate Emitter Leakage Current (uA)0.25
Maximum Power Dissipation (mW)83000
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)175
PackagingTape and Reel
AutomotiveNo
Pin Count3
Standard Package NameTO-252
Supplier PackageDPAK
MilitaryNo

 

 

 

 

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