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Silicon Carbide Mechanical Seals For Rotating Machinery Description of Customized SSiC Mechanical Seals: Mechanical seal is a kind of shaft sealing device rotating the michanery, ...
Tianjin, china
Verified
4" P Grade SiC Seed Crystal Resistivity 0.015~0.028ohm.Cm 32.5mm±2.0mm SiC Seed Crystal 4" PGrade SiC is an excellent thermal conductor. Heat will flow more readily through SiC ...
Shanghai, china
Verified
Sic Silicon Carbide Heater Heating Elements for producing car wheels USAGE: Used for heating in the furnace or laundry or other peripheral equipments for aluminum alloy die casting ...
Shandong, china
Verified
2inch 4inch 6inch 8Inch Silicon Carbide Wafer Sic Wafers Dummy Research Prime Grade A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It ...
Shanghai, china
Verified
TO-247-4 MSC025SMA120 Silicon Carbide N-Channel Power MOSFET Transistors Product Description Of MSC025SMA120 MSC025SMA120 device is a 1200 V, 25 mΩ SiC MOSFET in a TO-247 4-lead ...
china
Verified
Silicon carbide rod Pusher Type Sintering Furnace for advanced ceramic materials Pusher furnaces are classified according to their design features. Pusher furnaces are designed for ...
Jiangsu, china
Verified
100.0mm±0.5mm SiC Seed Crystal 4" P Grade 4.0°±0.2° Politype 4H SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than ...
Shanghai, china
Verified
U-shaped Silicon Carbide Heating Element for Aluminum Alloy Die Casting usage: Used for heating in furnaces, laundries, or other peripheral equipment in the aluminum alloy die ...
Shandong, china
Verified
TO-247-3 MSC027SMA330 Silicon Carbide N-Channel Power MOSFET Transistors Product Description Of MSC027SMA330 MSC027SMA330 is an innovative option for power electronic designers ...
china
Verified
High temperature sintering continuous pusher furnace with silicon carbide rods for alumina zirconia structural parts A pusher furnace is a continuous furnace concept that allows ...
Jiangsu, china
Verified
100.0mm±0.5mm SiC Seed Crystal 4" P Grade 0.015~0.028ohm.cm 18.0mm±2.0mm SiC Seed Crystal 4" PGrade Electronic devices formed in SiC can operate at extremely high temperatures ...
Shanghai, china
Verified
1700V 100A Silicon Carbide Schottky Diode MSCDC100A170D1PAG Automotive IGBT Modules​ Product Description Of MSCDC100A170D1PAG MSCDC100A170D1PAG is Phase Leg SiC Diodes Power Module...
china
Verified
High temperature annealing continuous silicon carbide rods pusher furnace for electronic components A pusher furnace is a continuous furnace concept that allows the processing of ...
Jiangsu, china
Verified
JDZJ01-001-001 SiC Seed Crystal 4" P Grade Si-Face 90°Cw.From Primary Flat±5° SiC Seed Crystal 4" PGrade The physical and electronic properties of SiC make it the foremost ...
Shanghai, china
Verified
Automotive IGBT Modules MSCSM70AM025CD3AG Silicon Carbide power module Transistors Product Description Of MSCSM70AM025CD3AG MSCSM70AM025CD3AG e is a phase leg 1200 V/55 A full SiC ...
china
Verified
High temperature sintering continuous pusher furnace with silicon carbide rods for alumina zirconia structural parts The pusher furnace is used to sinter ceramic parts at ...
Jiangsu, china
Verified
Primary Flat Lengh 32.5mm±2.0mm SiC Seed Crystal 4" P Grade 100.0mm±0.5mm 0.015~0.028ohm.cm SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over ...
Shanghai, china
Verified
TO-263-8 IMBG65R048M1H Silicon Carbide MOSFETs Transistors 650V SiC Trench Power​ Product Description Of IMBG65R048M1H IMBG65R048M1H is 650V CoolSiC M1 SiC Trench Power Device, ...
china
Verified
1500°C PID Control Heat Treatment Vacuum Tube Calcination Furnace With Silicon Carbide Rod 1﹑1500°C Tube Furnace 1500° C tube furnace not only has a refined shape and craftsmanship...
Jiangsu, china
Verified
Integrated Circuit Chip IMBG65R022M1H 650V N-Channel Silicon Carbide MOSFET Product Description Of IMBG65R022M1H IMBG65R022M1H N-Channel 650 V 64A (Tc) 300W (Tc) Surface Mount PG...
china
Verified
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