IRLL110TRPBF Ultra-Low On-Resistance High-Performance MOSFET Power Electronics Device

IRLL110TRPBF Ultra-Low On-Resistance High-Performance MOSFET Power Electronics Device

IRLL110TRPBF, N-Channel MOSFET

• Maximum Drain Source Voltage: 60V
• RDS(ON): 0.45Ω
• Static Drain-Source On-Resistance: 0.45Ω
• Gate-Source Voltage: ±20V
• Continuous Drain Current: 11A
• Pulsed Drain Current: 22A
• Power Dissipation: 17.3W
• Operating Temperature Range: -55°C to +150°C
• Mounting Style: SMD/SMT
• Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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