Shenzhen Sai Collie Technology Co., Ltd. |
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FDD86369 MOSFET Power Electronics
High Performance N-Channel TO-252-3 Enhanced Reliability Durability
Product Status | Active | |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 7.9mOhm @ 80A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2530 pF @ 40 V | |
FET Feature | - | |
Power Dissipation (Max) | 150W (Tj) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | D-PAK (TO-252) | |
Package / Case |
The FDD86369 is a high voltage and high current N-channel MOSFET device designed for use in power electronic applications such as motor control, switching power supplies, power factor correction and other high power converters. It is packaged in a TO-252-3 package, which is an insulated package with three pins, making it ideal for applications where space is a premium. The device offers a low on-state resistance, fast switching speed and high current capability, as well as excellent thermal performance and superior reliability. It is designed to operate at temperatures up to 175°C and is capable of handling up to 60A drain current. The FDD86369 is a robust solution for power electronics applications.
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