Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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FDS6670A 8-SOIC Power MOSFET for High-Temperature High-Performance Power Electronics Applications
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 8mOhm @ 13A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2220 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-SOIC | |
Package / Case |
Product Listing:
Manufacturer: ON Semiconductor
Product Name: FDS6670A
Package: 8-SOIC
Parameters:
• Load Current: 8A
• Drain-Source Voltage: 80V
• On-Resistance RDS(on): 0.01 Ω
• Gate-Source Voltage: ±10V
• Operating Temperature: -55°C to +150°C
• Mounting Style: SMD/SMT
• Number of Pins: 8
