Shenzhen Sai Collie Technology Co., Ltd. |
|
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.4A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 49W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | TO-252AA | |
Package / Case |
Product Listing:
ON Semiconductor FQD5N60CTM, 600V N-Channel MOSFET
Parameters:
• Drain-Source Voltage (Vdss): 600V
• Drain-Source Current (Id): 5.4A
• RDS(on): 0.09Ω
• Gate-Source Voltage (Vgs): ±20V
• Gate-Threshold Voltage (Vth): 2.2V
• Power Dissipation (Pd): 33W
• Transistor Case Style: TO-220AB
• No. of Pins: 3
• Operating Temperature Range: -55°C to +150°C