Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 5.9mOhm @ 23A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 120µA | |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2040 pF @ 40 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.7W (Ta), 100W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-PQFN (3.3x3.3) | |
Package / Case |
Product Listing:
Product: ON Semiconductor NTTFS5D9N08HTWG MOSFET Power Electronics
Parameters:
• Drain-Source Voltage (Vdss): 60 V
• Gate-Source Voltage (Vgs): ±20 V
• Continuous Drain Current (Id): 8.5 A
• Pulsed Drain Current (Idm): 17 A
• On-Resistance (Rds): 0.09 Ohm
• Rise Time (tr): 5 ns
• Fall Time (tf): 10 ns
• Maximum Junction Temperature (Tj): 175 °C
• Operating Temperature: -55 °C to 175 °C
• Package/Case: TO-252-3, DPAK
• Mounting Type: Surface Mount
• Number of Pins: 3
• Brand: ON Semiconductor
• Transistor Type: MOSFET N-Channel, Metal Oxide
• Transistor Polarity: N-Channel
• Power Dissipation (Pd): 12.5 W
