Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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FDMC86262P Advanced N-Channel MOSFET Power Electronics for High-Performance and Low-Voltage Applications
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 307mOhm @ 2A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | |
Vgs (Max) | ±25V | |
Input Capacitance (Ciss) (Max) @ Vds | 885 pF @ 75 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.3W (Ta), 40W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-MLP (3.3x3.3) | |
Package / Case |
Product Listing:
ON Semiconductor FDMC86262P N-Channel MOSFET Power Electronics
Parameters:
• Drain-Source Voltage: 100V
• Continuous Drain Current: 7.5A
• Drain-Source On-State Resistance: 0.0078Ω
• Gate-Source Voltage: ±20V
• Power Dissipation: 1.9W
• Operating and Storage Temperature Range: -55°C to +150°C
• Mounting Type: Through Hole
• Package / Case: D2-Pak
