Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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FDBL86210-F085 MOSFET Power Electronics – High Performance and Reliability for Power Control Applications
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 6.3mOhm @ 80A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 5805 pF @ 75 V | |
FET Feature | - | |
Power Dissipation (Max) | 500W (Tj) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-HPSOF | |
Package / Case |
Product Listing:
ON Semiconductor FDBL86210-F085 Power MOSFET
Parameters:
• Drain-Source Voltage (VDS): 800 V
• Drain-Source On-State Resistance (RDS(on)): 85 mΩ
• Continuous Drain Current (ID): 20 A
• Power Dissipation (PD): 80 W
• Package: TO-220
• Mounting Type: Through Hole
