Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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FCH072N60F MOSFET Power Electronics - High Efficiency and High Power Output for Industrial and Automotive Applications
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 72mOhm @ 26A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 8660 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 481W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | TO-247-3 | |
Package / Case |
ON Semiconductor FCH072N60F N-Channel MOSFET
Product Overview:
The FCH072N60F from ON Semiconductor is a N-channel MOSFET with a maximum drain-source voltage of 600V. This device features a low on-resistance and is optimized for high frequency switching applications. The FCH072N60F is RoHS compliant and has an operating temperature range of -55°C to 175°C.
Product Specifications:
• Maximum Drain-Source Voltage: 600V
• On-Resistance: 0.072Ω
• Maximum Gate-Source Voltage: 25V
• Maximum Continuous Drain Current: 120A
• RDS(on): 0.072Ω
• Operating Temperature: -55°C to 175°C
• Configuration: Single
• Mounting Type: Through Hole
• Package/Case: TO-247-3
• RoHS Compliant: Yes
