Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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N-Channel PowerTrench
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 70mOhm @ 22A, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 4.4mA | |
Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 3090 pF @ 400 V | |
FET Feature | - | |
Power Dissipation (Max) | 312W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | D²PAK (TO-263) | |
Package / Case |
Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance
technology for outstanding low on−resistance and lower gate charge
performance. This advance technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is
very suitable for various AC/ DC power conversion for system
miniaturization and higher efficiency.
Features
• 700 V @ TJ = 150°C
• RDS(on) = 62 m (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 78 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• UPS / Solar
