Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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FCH104N60F MOSFET Power Electronics N-Channel SUPERFET II FRFET 600 V 37 A 104 m Package TO-247-3
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 104mOhm @ 18.5A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 139 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 5950 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 357W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | TO-247-3 | |
Package / Case |
Description
SUPERFET® II MOSFET is ON Semiconductor’s brand−new high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance
technology for outstanding low on−resistance and lower gate charge
performance. This technology is tailored to minimize conduction
loss, provide superior switching performance, dv/dt rate
and higher avalanche energy. Consequently, SUPERFET II MOSFET is
very suitable for the switching power applications such as PFC,
server/telecom power, FPD TV power, ATX power and industrial power
applications. SUPERFET II FRFET® MOSFET’s optimized body diode
reverse recovery performance can remove additional
component and improve system reliability.
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 98 m
• Ultra Low Gate Charge (Typ. Qg = 107 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 109 pF)
• 100% Avalanche Tested
• This Device is Pb−Free and is RoHS Compliant
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• EV Charger
• UPS / Solar
