Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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FDD6630A MOSFET Power Electronics 30V N-Channel PowerTrenchÒÒ PackageTO-252
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 35mOhm @ 7.6A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 462 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 28W (Ta) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | TO-252AA | |
Package / Case |
General Description
This N-Channel MOSFET has been designed specifically to improve the
overall efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
Applications
· DC/DC converter
· Motor drives
Features
· 21 A, 30 V RDS(ON) = 35 mW @ VGS = 10 V
RDS(ON) = 50 mW @ VGS = 4.5 V
· Low gate charge (5nC typical)
· Fast switching
· High performance trench technology for extremely low RDS(ON)
