Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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IRF530NSTRLPBF MOSFET Power Electronics N-Channel Surface Mount D2PAK
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 90mOhm @ 9A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.8W (Ta), 70W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | D2PAK | |
Package / Case |
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Description:
Advanced HEXFETÆ Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low
onresistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and
the lowest possible on-resistance in any existing surface mount
package. The D2Pak is suitable for high current applications
because of its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF530NL) is available for low-profile
applications.
