Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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AON7410 MOSFET Power Electronics
Transistors N-Channel 30V 9.5A For Use In DC DC Converters Package 8-DFN-EP
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 20mOhm @ 8A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.1W (Ta), 20W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-DFN-EP (3x3) | |
Package / Case | ||
Base Product Number |
General Description
The AON7410 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC - DC converters and Load Switch applications. RoHS and Halogen-Free Compliant
Features
VDS (V) = 30V
ID = 24A (VGS = 10V)
RDS(ON) < 20mΩ (VGS = 10V)
RDS(ON) < 26mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
A: The value of RθJA is measured with the device mounted on 1in2
FR-4 board with 2oz. Copper, in a still air environment with TA
=25°C. The
Power dissipation PDSM is based on RθJA t ≤ 10s value and the
maximum allowed junction temperature of 150°C. The value in any
given
application depends on the user's specific board design, and the
maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using
junction-to-case thermal resistance, and is more useful in setting
the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature
TJ(MAX)=150°C.
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