Shenzhen Sai Collie Technology Co., Ltd. |
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AO4441 MOSFET Power Electronics
FETs MOSFETs Transistors P-Channel 60V 4A Surface Mount Package 8-SOIC
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 4A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1120 pF @ 30 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.1W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-SOIC | |
Package / Case | ||
Base Product Number |
General Description
The AO4441 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
Product Summary
VDS -60V
ID (at VGS=-10V) -4A
RDS(ON) (at VGS=-10V) < 100mW
RDS(ON) (at VGS = -4.5V) < 130mW
A: The value of R qJA is measured with the device mounted on 1in 2
FR-4 board with 2oz. Copper, in a still air environment with T A
=25°C. The
value in any a given application depends on the user's specific
board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R qJA is the sum of the thermal impedence from junction to
lead R qJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained
using 80 ms pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4
board with 2oz. Copper, in a still air environment with T A=25°C.
The SOA
curve provides a single pulse rating.
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