Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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FDN308P MOSFET Power Electronics
Product Description:
The FDN308P is an N-channel enhancement mode power MOSFET designed for use in applications that require high switching performance and excellent power dissipation. This device is designed to deliver high current and low on-state resistance at high frequencies. It features a low gate-to-drain charge, low gate-to-source charge, and a fast turn-on time. The FDN308P is ideal for fast switching and high frequency power conversion applications.
Features:
• N-channel enhancement mode
• Low on-state resistance
• Low gate-to-drain charge
• Low gate-to-source charge
• Fast turn-on time
• High current capability
• High frequency power conversion applications
Specifications:
• Drain-source voltage: 30V
• Continuous drain current: 8A
• Max. Drain-source on-state resistance: 0.08Ω
• Gate-source threshold voltage: 1.3V
• Maximum operating temperature: 150°C
• Packaging type: TO-220
Product Status | Active | |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 125mOhm @ 1.5A, 4.5V | |
Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 5.4 nC @ 4.5 V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 341 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 500mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SOT-23-3 | |
Package / Case | ||
Base Product Number |
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