SI4703-C19-GMR RF Power Transistor - Compact High Efficiency And Reliable Performance

SI4703-C19-GMR RF Power Transistor

Product Description:

The SI4703-C19-GMR is an advanced RF power transistor designed using a high-voltage BiCMOS process. This device is suitable for high-power, high-efficiency, and low-noise applications in the HF and VHF bands. It features a wide bandwidth, high output power, and low noise figure. The SI4703-C19-GMR is suitable for use in a variety of RF applications including RF amplifiers, RF power amplifiers, high-power RF transmitters, and more.

Key Features:

- Broadband operation from 0.7 to 500 MHz
- High output power up to 11.5 dBm
- Low noise figure of 1.7 dB
- Wide VSWR of 1.5:1
- High gain of 20 dB
- High efficiency of up to 50%
- High power-added efficiency of up to 33%
- Low self-heating of < 0.4°C/W
- High stability over temperature and aging
- RoHS compliant

Package:
- 3 mm x 3 mm

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