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STL150N3LLH5 N-CH MOSFET IC 30V 195A POWERFLAT N P Channel Mosfet

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STL150N3LLH5 N-CH MOSFET IC 30V 195A POWERFLAT N P Channel Mosfet

Country/Region china
City & Province shenzhen guangdong
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Product Details

STL150N3LLH5 MOSFET N-CH 30V 195A POWERFLAT  N P Channel Mosfet

STMicroelectronics
Product Category:MOSFET
RoHS:Details
Si
SMD/SMT
PowerFLAT-5x6-8
N-Channel
1 Channel
30 V
150 A
1.75 mOhms
- 22 V, + 22 V
- 55 C
+ 150 C
80 W
Enhancement
STripFET
STL150N3LLH5
Reel
Cut Tape
MouseReel
Brand:STMicroelectronics
Configuration:Single
Fall Time:47.8 ns
Height:0.81 mm
Length:5 mm
Product Type:MOSFET
Rise Time:30.8 ns
Subcategory:MOSFETs
Transistor Type:1 N-Channel
Typical Turn-Off Delay Time:65.8 ns
Typical Turn-On Delay Time:17.2 ns
Width:6 mm
Unit Weight:0.002681 oz


Description
This STripFET™V Power MOSFET technology is among the latest improvements, which have been
especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.
 
This product utilizes the 5th generation of desigen rules of ST's proprietary STripFET TM technology- .
The 1owest available RDS(on)*Qg. in this chip scale package. makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
 
Features
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
 
Application
■ Switching applications
 

The STL150N3LLH5 is a N-channel power MOSFET transistor manufactured by STMicroelectronics.

It is part of the STripFET™ V series and is designed for high-efficiency, low-dropout applications.

This MOSFET has a maximum drain-to-source voltage of 30V and a continuous drain current of 35A [1].

 

Key specifications of the STL150N3LLH5:

  • Type: N-channel power MOSFET
  • Vgs (Gate-to-Source Voltage): ±22V
  • ID (Continuous Drain Current): 35A
  • Rds On (Max) @ Id, Vgs: 1.75mΩ @ 17.5A, 10V
  • Package/Case: 8-PowerVDFN
  • Operating Temperature: -55°C to 150°C
  • Power Dissipation-Max: 114W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Turn-On Delay Time: 17.2ns
  • Turn-Off Delay Time: 65.8ns
  • Rise Time: 30.8ns
  • Fall Time (Typ): 47.8ns
  • Avalanche Energy Rating (Eas): 300mJ
  • Dimensions: 5mm x 6mm x 950μm [3]

 

Applications:

  • Power supplies and switching power supplies
  • Motor control
  • Amplifiers
  • Automation industry for switching surge currents
 

 

 

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