Active Member
|
[China]
Address: Rm 201 Building 6, South Commercial Zone, Xueqian Rd and 1st South Ring, Dengfeng, Henan, China
Contact name:Yuwei, Chen
SPARK INDUSTRY (HENAN) CO.,LTD |
|
|
| Product Name: | Silicon Carbide Heating Elements | Density: | 2.8g/Cm³ |
|---|---|---|---|
| Material: | Silicon Carbide (SiC) | Power Source: | Electric Power |
| Shape: | ED/U/W/SC/SCR/DB/G/H/DM | Working Temperature: | Up To 1450℃ |
| Application: | Electric Furnaces | After-sales Service: | Online Support |
| High Light: | 1290C Resistive Heating Element,1450C Resistive Heating Element,1450C SiC Heating Element | ||
1550 ℃ Silicon Carbide Electric Heating Element
SiC Heating Elements Introduction
Silicon Carbide Heating Elements is a kind of non-metal high temperature electric heating element. Silicon Carbide Heating Elements is made of selected high quality green silicon carbide as main material, which is made into blank, siliconization under high temperature and recrystallized. It is the most popular type of economical heating element capable of operating under hot and rigorous environments.
Silicon Carbide Heating Elements Applications
Electronic industry
Metallurgy
Al/Zn-industry
Ceramic industry
Float glass industry
Optical glass industry
Laboratory equipment
Fluorescence powder
Recommended surface load and Influences to Surfaces of the Elements in Different Operating Temperature
| atmosphere | Furnace Temperature(°C) | Surface Load(W/cm2) | The influence on the Rod |
| Ammonia | 1290 | 3.8 | The action on SiC produces methane and destroys the protection film of SiO2 |
| Carbon dioxide | 1450 | 3.1 | Corrode SiC |
| Carbon monoxide | 1370 | 3.8 | Absorb carbon powder and influence the protection film of SiO2 |
| Halogen | 704 | 3.8 | Corrode SiC and destroy the protection film of SiO2 |
| Hydrogen | 1290 | 3.1 | The action on SiC produces methane and destroys the protection film of SiO2 |
| Nitrogen | 1370 | 3.1 | The action on SiC produces insulating layer of silicon nitride |
| Sodium | 1310 | 3.8 | Corrode SiC |
| silicon dioxide | 1310 | 3.8 | Corrode SiC |
| Oxygen | 1310 | 3.8 | SiC oxidized |
| Water-vapor | 1090-1370 | 3.1-3.6 | The action on SiC produces hydrate of silicon |
| Hydrocarbon | 1370 | 3.1 | Absorb carbon powder resulted in Hot pollution |
Following are to be provided when making an inquiry or placing an order for Silicon Carbide Heating Elements:
As an example:
U Type, OD=20mm, HZ=300mm, CZ=200mm, A=60mm, Resistance=1.84Ω
Specify as: SiC U20/300/200/60/1.84Ω
1550 ℃ Silicon Carbide Electric Heating Element
DescriptionProduct Name: Silicon Carbide Heating Elements Density: 2.8g/Cm³
Material: Silicon Carbide (SiC) Power Source: Electric Power
Shape: ED/U/W/SC/SCR/DB/G/H/DM Working Temperature: Up To 1450℃
Application: Electric Furnaces After-sales Service: Online Support
High Light:
1290C Resistive Heating Element
,
1450C Resistive Heating Element
,
1450C SiC Heating Element
1550 ℃ Silicon Carbide Electric Heating Element
SiC Heating Elements Introduction
Silicon Carbide Heating Elements is a kind of non-metal high temperature electric heating element. Silicon Carbide Heating Elements is made of selected high quality green silicon carbide as main material, which is made into blank, siliconization under high temperature and recrystallized. It is the most popular type of economical heating element capable of operating under hot and rigorous environments.
Silicon Carbide Heating Elements Applications
Electronic industry
Metallurgy
Al/Zn-industry
Ceramic industry
Float glass industry
Optical glass industry
Laboratory equipment
Fluorescence powder
Recommended surface load and Influences to Surfaces of the Elements in Different Operating Temperature
atmosphere Furnace Temperature(°C) Surface Load(W/cm2) The
influence on the Rod
Ammonia 1290 3.8 The action on SiC produces methane and destroys
the protection film of SiO2
Carbon dioxide 1450 3.1 Corrode SiC
Carbon monoxide 1370 3.8 Absorb carbon powder and influence the
protection film of SiO2
Halogen 704 3.8 Corrode SiC and destroy the protection film of SiO2
Hydrogen 1290 3.1 The action on SiC produces methane and destroys
the protection film of SiO2
Nitrogen 1370 3.1 The action on SiC produces insulating layer of
silicon nitride
Sodium 1310 3.8 Corrode SiC
silicon dioxide 1310 3.8 Corrode SiC
Oxygen 1310 3.8 SiC oxidized
Water-vapor 1090-1370 3.1-3.6 The action on SiC produces hydrate of
silicon
Hydrocarbon 1370 3.1 Absorb carbon powder resulted in Hot pollution
Following are to be provided when making an inquiry or placing an order for Silicon Carbide Heating Elements:
Type: U
Outer Diameter (OD): in or mm,
Hot Zone length (HZ) (the heating section): in or mm,
Cold Zone length (CZ): in or mm,
Shank spacing (A): in or mm
Overall Resistance: Ω
As an example:
U Type, OD=20mm, HZ=300mm, CZ=200mm, A=60mm, Resistance=1.84Ω
Specify as: SiC U20/300/200/60/1.84Ω
