Active Member
|
[China]
Address: CSCES strait screen and core intelligent manufacturing base，Shuangliu District，Chengdu City, Sichuan Province, P. R. China
Contact name:Tyra
ZEIT Group |
|
|
Atomic Layer Deposition in Catalyst Industry
Applications
| Applications | Specific Purpose |
| Catalyst | Oxide catalyst |
| Metal catalyst |
Working Principle
Atomic layer deposition (ALD) technology, also known as atomic
layer epitaxy (ALE) technology, is a chemical
vapor film deposition technology based on ordered and surface self-saturated
reaction. ALD is applied in
semiconductor field. As Moore’s Law evolves constantly and the feature sizes and etching
grooves of integrated
circuits have been constantly miniaturizing, the smaller and smaller etching grooves have been
bringing severe
challenges to the coating technology of grooves and their side walls. Traditional PVD and CVD process
have been
unable to meet the requirements of superior step coverage under narrow line-width. ALD technology is playing an
increasingly important role in semiconductor industry due to its excellent shape-keeping, uniformity and higher step
coverage.
Features
| Model | ALD-C-X—X |
| Coating film system | AL2O3, TiO2, ZnO, etc |
| Coating temperature range | Normal temperature to 500℃ (Customizable) |
| Coating vacuum chamber size | Inner diameter: 1200mm, Height: 500mm (Customizable) |
| Vacuum chamber structure | According to customer’s requirements |
| Background vacuum | <5×10-7mbar |
| Coating thickness | ≥0.15nm |
| Thickness control precision | ±0.1nm |
| Coating size | 200×200mm² / 400×400mm² / 1200×1200 mm², etc |
| Film thickness uniformity | ≤±0.5% |
| Precursor and carrier gas | Trimethylaluminum, titanium tetrachloride, diethyl zinc, pure
water, |
| Note: Customized production available. | |
Coating Samples
Process Steps
→ Place the substrate for coating into the vacuum chamber;
→ Vacuumize the vacuum chamber at high and low temperature, and
rotate the substrate synchronously;
→ Start coating: the substrate is contacted with precursor in
sequence and without simultaneous reaction;
→ Purge it with high-purity nitrogen gas after each reaction;
→ Stop rotating the substrate after the film thickness is up to
standard and the operation of purging and cooling is
completed, then take out the substrate
after the vacuum breaking conditions are met.
Our Advantages
We are manufacturer.
Mature process.
Reply within 24 working hours.
Our ISO Certification
Parts Of Our Patents
Parts Of Our Awards and Qualifications of R&D
