Results formultifunctional power transistor and igbtfrom 34673 Products.
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FGH60N60SMD 600V 60A Field Stop IGBT Power Transistor Features • Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for easy parallel operating • High ...
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Technical parameter Electrical Characteristics Measurement Type Three-phase three-wire AC system Three-phase four-wire AC system Sampling rate: 64 times per cycle Data refresh rate ...
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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
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12volt 300Amp high frequency switching DC IGBT power supply rectifier Power supply unit (also known as switch rectifier SMR) operates at high frequency through MOSFET or IGBT. The ...
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SC-101E Power Transistor Lead Forming Machine Usage: This machine is used to form/bend power transistor, including TO-92, TO-126, TO-3P, TO-220, etc Specifications: Voltage:220V ...
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JY21L High and Low side driver General Description The product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. The floating channel driver ...
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DS9L DS7L Series LCD Display 3 Phase Multifunction Power Meter RS485 Modbus-RTU Protocol DS9L DS7L Series high accuracy 3phase multifunction power meter, LCD display, RS485, Modbus...
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800V CoolMOSTM CE Power Transistor IPA80R1K4CE Field Effect Transistor Description CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs. The high voltage ...
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650V Transistors IMW65R030M1H N-Channel SiC Trench Power Transistors TO-247-3 Product Description Of IMW65R030M1H IMW65R030M1H is 650V CoolSiC M1 SiC Trench Power Device, it is ...
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High-Power Transistor for Electronics Applications Discover the GP60S50X MOSFET, TO-247 Package, 50A Current and 600V Voltage The GP60S50X MOSFET is a must-have for high-power ...
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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
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JY213L High-Speed Gate Driver For Power MOSFET And IGBT Devices With Three Indepedent Output Channels Description JY213L is a high-speed 3-phase gate driver tailored for power ...
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3Phase Multifunction Power Meter RS485 2Loop Programmable Alarm LED Display DS9E Series DS9E series 3Phase Multifunction Power Meter RS485 Port 2Loop Alarm LED Display 1. Features ...
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Power Transistors SCT040H120G3AG SIC Integrated Circuit Chip H2PAK-7 Automotive Grade Product Description Of SCT040H120G3AG SCT040H120G3AG is Power Transistors - Automotive-grade ...
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low ...
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N Channel IPT015N10N5 100V Power Transistor 8-PowerSFN Integrated Circuit Chip Product Description Of IPT015N10N5 IPT015N10N5 is 100V, 300A (Tc), 375W (Tc) N-Channel Power ...
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General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are ...
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General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are ...
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low ...
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