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TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type

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Contact name:David Lee

TO-92 Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN)

FEATURE

High voltage

MARKING

ORDERING INFORMATION

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	310	V
VCEO	Collector-Emitter Voltage	305	V
VEBO	Emitter-Base Voltage	5	V
I _C	Collector Curren t -Continuous	200	mA
I CM	Collector Current - Pulsed	500	mA
P_C	Collector Power Dissipation	625	mW
T_J	Junction Temperature	150	℃
Tstg	Storage Temperature	-55-150	℃
RӨJA	Thermal Resistance, junction to Ambient	200	℃ /mW
RӨJC	Thermal Resistance, junction to Case	83.3	℃ /mW

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=100uA, I_E=0	310			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C=1mA, I_B=0	305			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=100μA, I_C=0	5			V
Collector cut-off current	ICBO	V_CB=200V, I_E=0			0.25	μA
Emitter cut-off current	IEBO	V_EB=5V, I_C=0			0.1	μA
DC current gain	hFE(1)	V_CE=10V, I_C=1mA	60
	hFE(2)	V_CE=10V, I_C=10mA	80		250
	hFE(3)	V_CE=10V, I_C=30mA	75
Collector-emitter saturation voltage	VCE(sat)	I_C=20mA, I_B=2mA			0.2	V
Base-emitter saturation voltage	VBE(sat)	I_C=20mA, I_B=2mA			0.9	V
Transition frequency	f_T	V_CE=20V, I_C=10mA,f=30MH_Z	50			MHz

RANK	A	B	C
RANGE	100-150	150-200	200-300

Typical Characteristics

Package Outline Dimensions