Featured Products: HXY4812 High Current Mosfet Switch Dual N Type High Performance , HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A, HXY9926A Logic Mosfet Switch , Mosfet Power Switch ±1.2v VGS Dual N Channel and more.
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
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| [Last Updated : 2024-04-11] |
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HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
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| [Last Updated : 2024-04-11] |
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HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages ...
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| [Last Updated : 2024-04-11] |
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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V ...
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| [Last Updated : 2024-04-11] |
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low ...
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| [Last Updated : 2024-04-11] |
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12H02TS 20V N+N-Channel Enhancement Mode MOSFET Description The 12H02TS uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs ...
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| [Last Updated : 2024-04-11] |
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8205S TSSOP-8 Plastic-Encapsulate MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power ...
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| [Last Updated : 2024-04-11] |
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5G03SIDF 30V N+P-Channel Enhancement Mode MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary ...
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| [Last Updated : 2024-04-11] |
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6G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may ...
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| [Last Updated : 2024-04-11] |
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10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs ...
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| [Last Updated : 2024-04-11] |
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20G04S 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs ...
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| [Last Updated : 2024-04-11] |
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET ...
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| [Last Updated : 2024-04-11] |
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET ...
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| [Last Updated : 2024-04-11] |
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HXY4606 30V Complementary MOSFET Description The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The complementary MOSFETs may be ...
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| [Last Updated : 2024-04-11] |
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET ...
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| [Last Updated : 2024-04-11] |
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WST2078 N&P-Channel MOSFET Description The WST2078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate ...
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| [Last Updated : 2024-04-11] |
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WST3078 N&P-Ch MOSFET Description The WST3078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge ...
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| [Last Updated : 2024-04-11] |
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20G04GD 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04GD uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable ...
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| [Last Updated : 2024-04-11] |
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WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and ...
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| [Last Updated : 2024-04-11] |
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QM4803D N-Ch and P-Channel MOSFET Description The QM4803D is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and ...
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| [Last Updated : 2024-04-11] |
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