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3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

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Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

Contact name:David Lee

Country/Region	china
City & Province	shenzhen guangdong

TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN)

FEATURE

Power Switching Applications

MARKING

13002B=Device code

Solid dot=Green molding compound device, if none,the normal device

XXX=Code

ORDERING INFORMATION

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	600	V
VCEO	Collector-Emitter Voltage	400	V
VEBO	Emitter-Base Voltage	6	V
I_C	Collector Current -Continuous	0.8	A
P_C	Collector Power Dissipation	0.9	W
T_J	Junction Temperature	150	℃
Tstg	Storage Temperature	-55 ~ 150	℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=100μA,I_E=0	600			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C=1mA,I_B=0	400			V
Emitter-base breakdown voltage	V(BR)EBO	I_E= 100μA,I_C=0	6			V
Collector cut-off current	ICBO	V_CB= 600V,I_E=0			100	µA
	ICEO	V_CE= 400V,I_B=0			100	µA
Emitter cut-off current	IEBO	V_EB= 6 V, I_C=0			100	µA
Dc c urrent gain	hFE1	V_CE= 10 V, I_C=200mA	9		40
	hFE2	V_CE= 10 V, I_C=0.25mA	5
Collector-emitter saturation voltage	VCE(sat)	I_C=200mA, I_B=40mA			0.5	V
Base-emitter saturation voltage	VBE(sat)	I_C=200mA, I_B=40mA			1.1	V
Transition frequency	f_T	V_CE=10V, I_C=100mA f =1MHz	5			MHz
Fall time	t_f	I_C=1A, I_B1=-I_B2=0.2A V_CC=100V			0.5	µs
Storage time	t_s				2.5	µs

Range

9-15

15-20

20-25

25-30

30-35

35-40

Typical Characteristics

TO-92 Package Outline Dimensions